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Strain in layered zinc blende and wurtzite semiconductor structures grown along arbitrary crystallographic directions
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10.1119/1.3291214
/content/aapt/journal/ajp/78/6/10.1119/1.3291214
http://aip.metastore.ingenta.com/content/aapt/journal/ajp/78/6/10.1119/1.3291214
View: Figures

Figures

Image of Fig. 1.
Fig. 1.

A two-dimensional lattice of a substrate, typically thick, and the atomically deposited material are shown to illustrate pseudomorphic growth and the inherent strain in the composite layered structure. In (a) the two layers are shown with their intrinsic or bulk lattice structure with lattice parameters and . In (b) the lattice of the deposited layer is shown dilated along the layer to conform to the lattice of the substrate leading to a built-in strain in the layer.

Image of Fig. 2.
Fig. 2.

The crystallographic axes for a zinc blende material and the growth plane , with the normal to the plane directed along the new -axis. The new -axis is taken along the intersection of the growth plane with the original plane.

Image of Fig. 3.
Fig. 3.

The line intersection QUT between the plane and the hexagonal plane together with the basis vectors , , and . The intercepts of the line along the three basis vectors are , , and , where .

Image of Fig. 4.
Fig. 4.

The crystallographic axes and the growth plane for a wurtzite material, with the normal to the plane directed along the new -axis. The new -axis is taken along the intersection of the growth plane with the hexagonal plane.

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/content/aapt/journal/ajp/78/6/10.1119/1.3291214
2010-05-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain in layered zinc blende and wurtzite semiconductor structures grown along arbitrary crystallographic directions
http://aip.metastore.ingenta.com/content/aapt/journal/ajp/78/6/10.1119/1.3291214
10.1119/1.3291214
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