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Signatures of nonthermal melting
1. M. Hase, M. Kitajima, A. M. Constantinescu, and H. Petek, “ The birth of a quasiparticle in silicon observed in time-frequency space,” Nature 426, 51 (2003).
2. C. V. Shank, R. Yen, and C. Hirlimann, “ Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transitions in silicon,” Phys. Rev. Lett. 50, 454 (1983).
7. Z. Lin and L. V. Zhigilei, “ Electron-phonon coupling and electron heat capacity of metals under conditions of strong electron-phonon nonequilibrium,” Phys. Rev. B 77, 075133 (2008).
8. V. Recoules, J. Clérouin, G. Zérah, P. M. Anglade, and S. Mazevet, “ Effect of intense laser irradiation on the lattice stability of semiconductors and metals,” Phys. Rev. Lett. 96, 055503 (2006).
9. Y. Rosandi, F. C. Kabeer, Y. Cherednikov, E. S. Zijlstra, M. E. Garcia, N. A. Inogamov, and H. M. Urbassek, “ Melting of Al induced by laser excitation of 2p holes,” Mater. Res. Lett. 3, 149 (2015).
10. B. J. Siwick, J. R. Dwyer, R. E. Jordan, and R. J. D. Miller, “ An atomic-level view of melting using femtosecond electron diffraction,” Science 302, 1382 (2003).
11. B. Rethfeld, K. Sokolowski-Tinten, D. von der Linde, and S. I. Anisimov, “ Ultrafast thermal melting of laser-excited solids by homogeneous nucleation,” Phys. Rev. B 65, 092103 (2002).
12. T. Sjodin, H. Petek, and H.-L. Dai, “ Ultrafast carrier dynamics in silicon: A two-color transient reflection grating study on a (111) surface,” Phys. Rev. Lett. 81, 5664 (1998).
13. M. Harb, R. Ernstorfer, T. Dartigalongue, C. T. Hebeisen, R. E. Jordan, and R. J. D. Miller, “ Carrier relaxation and lattice heating dynamics in silicon revealed by femtosecond electron diffraction,” J. Phys. Chem. B 110, 25308 (2006).
15. J. K. Chen, D. Y. Tzou, and J. E. Beraun, “ Numerical investigation of ultrashort laser damage in semiconductors,” Int. J. Heat Mass Transfer 48, 501 (2005). Data listed in this paper are used in many classical molecular-dynamics simulations of Si after ultrashort laser excitation. Note, however, that in Table 1 a square is mistakably missing in the expression for τe.
16. M. Beye, F. Sorgenfrei, W. F. Schlotter, W. Wurth, and A. Föhlisch, “ The liquid-liquid phase transition in silicon revealed by snapshots of valence electrons,” Proc. Natl. Acad. Sci. U. S. A. 107, 16772 (2010).
17. A. Gambirasio, M. Bernasconi, and L. Colombo, “ Laser-induced melting of silicon: A tight-binding molecular dynamics simulation,” Phys. Rev. B 61, 8233 (2000).
18. M. Harb, R. Ernstorfer, C. T. Hebeisen, G. Sciaini, W. Peng, T. Dartigalongue, M. A. Eriksson, M. G. Lagally, S. G. Kruglik, and R. J. D. Miller, “ Electronically driven structure changes of Si captured by femtosecond electron diffraction,” Phys. Rev. Lett. 100, 155504 (2008).
20. H. O. Jeschke, M. E. Garcia, M. Lenzner, J. Bonse, J. Krüger, and W. Kautek, “ Laser ablation thresholds of silicon for different pulse durations: Theory and experiment,” Appl. Surf. Sci. 197–198, 839 (2002).
22. E. S. Zijlstra, A. Kalitsov, T. Zier, and M. E. Garcia, “ Squeezed thermal phonons precurse nonthermal melting of silicon as a function of fluence,” Phys. Rev. X 3, 011005 (2013).
24. E. S. Zijlstra, T. Zier, B. Bauerhenne, S. Krylow, P. M. Geiger, and M. E. Garcia, “ Femtosecond-laser-induced bond breaking and structural modifications in silicon, TiO2, and defective graphene: An ab initio molecular dynamics study,” Appl. Phys. A 114, 1 (2014).
27. J. M. Holender and G. J. Morgan, “ Molecular dynamics simulations of a large structure of amorphous Si and direct calculations of the structure factor,” J. Phys.: Condens. Matter 3, 1947 (1991).
30. C. Rischel, A. Rousse, I. Uschmann, P. A. Albouy, J.-P. Geindre, P. Audebert, J.-C. Gauthier, E. Förster, J.-L. Martin, and A. Antonetti, “ Femtosecond time-resolved x-ray diffraction from laser-heated organic films,” Nature 390, 490 (1997).
33. Z. Lin and L. V. Zhigilei, “ Time-resolved diffraction profiles and atomic dynamics in short-pulse laser-induced structural transformations: Molecular dynamics study,” Phys. Rev. B 73, 184113 (2006).
35. G. Sciaini, private communication (2015).
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Intense ultrashort laser pulses can melt crystals in less than a picosecond but, in spite of over thirty years of active research, for many materials it is not known to what extent thermal and nonthermal microscopic processes cause this ultrafast phenomenon. Here, we perform ab-initio molecular-dynamics simulations of silicon on a laser-excited potential-energy surface, exclusively revealing nonthermal signatures of laser-induced melting. From our simulated atomic trajectories, we compute the decay of five structure factors and the time-dependent structure function. We demonstrate how these quantities provide criteria to distinguish predominantly nonthermal from thermal melting.
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