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Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
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We have used pulsed laser deposition to fabricate graphene on catalytic nickelthin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2 each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphenegrowth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
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