Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/1/2/10.1063/1.3605715
1.
1. I. Pintilie, E. Fretwurst, G. Lindstroem, and J. Stahl, Appl. Phys. Lett. 82, 2169 (2003).
http://dx.doi.org/10.1063/1.1564869
2.
2. M. Mikelsen, J. H. Bleka, J. S. Christensen, E. V. Monakhov, B. G. Svensson, J. Harkonen, and B. Avset, Phys. Rev. B 75, 155202 (2007).
http://dx.doi.org/10.1103/PhysRevB.75.155202
3.
3. M. Scaringella, D. Menichelli, A. Candelori, R. Rando, and M. Bruzzi, IEEE Trans. Nucl. Sci, 53, 589 (2006).
http://dx.doi.org/10.1109/TNS.2006.873216
4.
4. V. Eremin, N. Strokan, E. Verbitskaya, and Z. Li, Nucl. Instrum. Meth. Phys. Res. A 372, 388 (1996).
http://dx.doi.org/10.1016/0168-9002(95)01295-8
5.
5. J. Härkönen, V. Eremin, E. Verbitskaya, S. Czellar, P. Pusa, Z. Li, and T. O. Niinikoski, Nucl. Instrum. Meth. Phys. Res. A 581, 347 (2007).
http://dx.doi.org/10.1016/j.nima.2007.08.001
6.
6. M. Huhtinen, Nucl. Instrum. Meth. Phys. Res. A 491, 194 (2002).
http://dx.doi.org/10.1016/S0168-9002(02)01227-5
7.
7. E. Gaubas, A. Uleckas, J. Vaitkus, J. Raisanen, and P. Tikkanen, Review Sci. Instrum. 81, 053303 (2010).
http://dx.doi.org/10.1063/1.3429944
8.
8. S. Väyrynen, P. Tikkanen, J. Räisänen, I. Kassamakov, and E. Tuominen, J. Appl. Phys. 106, 024908 (2009).
http://dx.doi.org/10.1063/1.3168436
9.
9. H. Amekura, N. Kishimoto, and K. Kono, Journ. Appl. Phys. 84, 4834 (1998).
http://dx.doi.org/10.1063/1.368725
10.
11.
11. S. Väyrynen, J. Räisänen, I. Kassamakov, and E. Tuominen, J. Appl. Phys. 106, 104914 (2009).
http://dx.doi.org/10.1063/1.3262611
12.
12. P. Blood and J. W. Orton, The electrical characterization of semiconductors: majority carriers and electron states (Academic Press, London –San Diego-New York, 1992).
13.
13. B. Y. Baliga. Power semiconductor devices, (PWS Publishing Company, Boston, 1995).
14.
14. M. A. Lampert, P. Mark, Current injection in solids, (Acad., New York, 1970).
15.
15. C. Leroy, P. Roy, G. Casse, M. Glaser, E. Grigoriev, F. Lemeilleur, Nucl. Insrum. Meth. Phys. Res. A 426, 99 (1999).
http://dx.doi.org/10.1016/S0168-9002(98)01478-8
16.
16. E. Gaubas, A. Uleckas, and J. Vaitkus, Nucl. Instr. Methods in Phys. Res. A 607, 92 (2009).
http://dx.doi.org/10.1016/j.nima.2009.03.136
17.
17. R. Smith, Semiconductors, 2nd edn. (Cambridge Univ. Press, London - New York, 1982).
http://aip.metastore.ingenta.com/content/aip/journal/adva/1/2/10.1063/1.3605715
Loading
/content/aip/journal/adva/1/2/10.1063/1.3605715
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/1/2/10.1063/1.3605715
2011-06-20
2016-09-29

Abstract

Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/1/2/1.3605715.html;jsessionid=r2oeRdvJ0W-WNSJEOR-V5OpT.x-aip-live-02?itemId=/content/aip/journal/adva/1/2/10.1063/1.3605715&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/1/2/10.1063/1.3605715&pageURL=http://scitation.aip.org/content/aip/journal/adva/1/2/10.1063/1.3605715'
Right1,Right2,Right3,