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We report on the patterning of organic single-crystaltransistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μ FET) of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μ FET of organic crystaltransistors was caused by contact resistance. Further improvement of the device with higher μ FET with smaller variation can be expected when lower and more uniform contact resistance is achieved.


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