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Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties
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FIG. 1.

(a) Sheet resistance with increasing temperature. We identified the resistance change temperaure as 49oC. However, both structures are the amorphous phase. (b) and (c) are TEM images of the a-FIST_2 and high temperature process, respectively. After the annealing process, the size of the Fe nanocluster was unchanged. However, an Fe cluster size increase from 4∼5 to 22∼26 nm was evident after the high temperature process.

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FIG. 2.

(a) Fe L-edge absorption spectra of a-FIST_1 and a-FIST_2. These are the typical Fe metal absorption peaks. (b), (c), and (d) are the EXAFS spectra. Also, in both a-FIST_1 and a-FIST_2, the atomic structure and chemical state of Fe showed evidence of Fe-Fe metallic bonding.

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FIG. 3.

(a) Magnetic properties of FIST thin film in zero-field-cooled (ZFC) and field-cooled (FC) magnetizations at 1 kOe from 5 to 350 K. (b) Magnetization curves for the 10 ∼ 300 K temperature range. (c) and (d) are the XMCD spectra of a-FIST_1 and a-FIST_2, respectively. In these results, the origin of the magnetic properties was assumed to be the metallic Fe.

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FIG. 4.

Core-level spectra of (a) Fe 3p, (b) Te 4d, (c) Sb 4d, and (d) In 4d as measured by HRXPS. During the phase-change, the core-level peaks of Fe and Te did not change with the binding energy and shape. However, the Sb 4d core-level peaks shifted at the higher binding energy of 0.1 eV, and In 4d core-level spectrum appeared a new shoulder at the binding energy of 16.8 eV.

Image of FIG. 5.

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FIG. 5.

(a) Curve fittings of In 4d core-level spectra for both a-FIST_1 and a-FIST_2. (b) plots the relative area intensity as calculated by the curve fittings.

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/content/aip/journal/adva/1/2/10.1063/1.3609265
2011-06-28
2014-04-19

Abstract

We propose a new electrical-phase-change magnetic material, namely Fe-doped In-Sb-Te (FIST), for possible non-volatile multi-bit memory applications. FIST was formed by typical co-sputter method with Fe 10 at.% doping in In3Sb1Te2. FIST offers the electrical-phase-change and magnetic properties by way of the change of In 4dchemical bonding density and embedded Fe nanoclusters with the size of 4∼5 nm, respectively. It maintained the amorphous phase on the electrical-phase-change. Chemical state of In was only changed to increase the density of In-In chemical bonding during the electrical-phase-change without Fe nanoclusters contribution. Also, the magnetic property by Fe nanoclusters was not changed by the electrical-phase-change. On this basis, we propose the FIST material with the individual electrical-phase-change and magnetic properties for the multi-bit nonvolatile memory materials.

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Scitation: Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties
http://aip.metastore.ingenta.com/content/aip/journal/adva/1/2/10.1063/1.3609265
10.1063/1.3609265
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