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We developed a carbon-assisted physical-vapor-deposition method for the growth of highly aligned ZnOnanowire arrays on any flat substrates in large area. Amorphous carbon (a-C) films acted as the preferential nucleation sites to facilitate the growth of high-quality ZnOnanowire array patterns. The ultrathin a-C films can effectively retard the inclined growth of ZnOnanowires at the edge of the a-C patterns. The investigations of the nanowire structures, photoluminescence and electrical transport properties have shown that the ZnOnanowires were well crystallized and the formation of defects in the nanowires was largely suppressed.


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