Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/1/3/10.1063/1.3624905
1.
1. U. Menczigar, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, and E. Kasper, Phys. Rev. B 47, 4099 (1993).
http://dx.doi.org/10.1103/PhysRevB.47.4099
2.
2. M. Jo, K. Ishida, N. Yasuhara, Y. Sugawara, K. Kawamoto, and S. Fukatsu, Appl. Phys. Lett. 86, 103509 (2005).
http://dx.doi.org/10.1063/1.1882757
3.
3. H. Rong, S. Xu, Y.-H. Kuo, V. Sih, O. Cohen, O. Raday, and M. Paniccia, Nature Photonics 1, 232 (2007).
http://dx.doi.org/10.1038/nphoton.2007.29
4.
4. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).
http://dx.doi.org/10.1063/1.94190
5.
5. S. G. Cloutier, P. A. Kossyrev, and J. Xu, Nature Mater. 4, 887 (2005).
http://dx.doi.org/10.1038/nmat1530
6.
6. Y. Yasutake, J. Igarashi, N. Tana-ami, and S. Fukatsu, Opt. Express 17, 16739 (2009).
http://dx.doi.org/10.1364/OE.17.016739
7.
7. J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, Opt. Express 15, 6727 (2007).
http://dx.doi.org/10.1364/OE.15.006727
8.
8. T. Nozaki, Y. Yatsurugi, and N. Akiyama, J. Electrochem. Soc. 117, 1566 (1970).
http://dx.doi.org/10.1149/1.2407385
9.
9. E. Rotem, J. M. Shainline, and J. M. Xu, Appl. Phys. Lett. 91, 051127 (2007).
http://dx.doi.org/10.1063/1.2766843
10.
10. E. Rotem, J. M. Shainline, and J. M. Xu, Opt. Express 15, 14099 (2007).
http://dx.doi.org/10.1364/OE.15.014099
11.
11. K. Murata, Y. Yasutake, K. Nittoh, K. Sakamoto, S. Fukatsu, and K. Miki, Appl. Phys. Express 3, 061302 (2010).
http://dx.doi.org/10.1143/APEX.3.061302
12.
12. K. Miki, K. Sakamoto, and T. Sakamoto, Surf. Sci. 406, 312 (1998).
http://dx.doi.org/10.1016/S0039-6028(98)00131-9
13.
13. J. H. Song and M. J. Sailor, Comments on Inorganic Chemistry: A Journal of Critical Discussion of the Current Literature 21, 69 (1999).
14.
14. R. F. Scholz, P. Werner, U. Gosele, and T. Y. Tan, Appl. Phys. Lett. 74, 392 (1999).
http://dx.doi.org/10.1063/1.123081
15.
15. G. Davies, Semiconductor Science and Technology 4, 200 (1989).
http://dx.doi.org/10.1088/0268-1242/4/3/010
16.
16. R. C. Jaeger, Introduction to Microelectronic Fabrication: Volume 5 of Modular Series on Solid State Devices (2nd Edition) (Modular Series on Solid State Deviced, Vol 5), (Prentice Hall, New Jersey, 2001).
17.
17. A. Ogane, K. Hirata, K. Horiuchi, Y. Nishihara, Y. Takahashi, A. Kitiyanan, and T. Fuyuki, Jpn. J. Appl. Phys. 48, 071201 (2009).
http://dx.doi.org/10.1143/JJAP.48.071201
http://aip.metastore.ingenta.com/content/aip/journal/adva/1/3/10.1063/1.3624905
Loading
/content/aip/journal/adva/1/3/10.1063/1.3624905
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/1/3/10.1063/1.3624905
2011-08-02
2016-12-03

Abstract

We propose a new method of creating light-emitting point defects, or G-centers, by modifying a siliconsurface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atoms into the silicon during heating; freezing in the created G-centers during rapid cooling. The method provides a surface region of up to 200 nm with highly dense carbon atoms of up to 4 × 1019 cm−3 to create G-centers, above the solubility limit of carbon atoms in silicon crystal (3 × 1017 cm−3). Photoluminescence measurement reveals that the higher-speed laser annealing produces stronger G-center luminescence. We demonstrate electrically-driven emission from the G-centers in samples made using our new method.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/1/3/1.3624905.html;jsessionid=kPdx2v3nQMgPZ05wwWcNhDVW.x-aip-live-02?itemId=/content/aip/journal/adva/1/3/10.1063/1.3624905&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/1/3/10.1063/1.3624905&pageURL=http://scitation.aip.org/content/aip/journal/adva/1/3/10.1063/1.3624905'
Right1,Right2,Right3,