No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
10. V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, J. Appl. Phys. 82, 5097 (1997).
14. G. Callsen, J. S. Reparaz, M. R. Wagner, R. Kirste, C. Nenstiel, A. Hoffmann, and M. R. Phillips, Appl. Phys. Lett. 98, 061906 (2011).
21. J. W. Goodman, “Introduction to Fourier Optics,” McGRAW-HILL New York 1996.
Article metrics loading...
In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of and A 1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.
Full text loading...
Most read this month