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Controlled nitrogen incorporation in GaNSb alloys
1. Dilute Nitride Semiconductors, ed. M. Henini (Elsevier, Amsterdam, 2005).
3. T. D. Veal, L. F. J. Piper, P. H. Jefferson, I. Mahboob, C. F. McConville, M. Merrick, T. J. C. Hosea, B. N. Murdin, and M. Hopkinson, Appl. Phys. Lett. 87, 182114 (2005).
4. T. D. Veal, L. F. J. Piper, S. Jollands, B. R. Bennett, P. H. Jefferson, P. A. Thomas, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 87, 132101 (2005).
5. P. H. Jefferson, T. D. Veal, L. F. J. Piper, B. R. Bennett, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 89, 111921 (2006).
6. P. H. Jefferson, L. Buckle, D. Walker, T. D. Veal, S. Coomber, P. A. Thomas, T. Ashley, and C. F. McConville, Phys. Status Solidi: Rapid Res. Lett. 1, 104 (2007).
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The incorporation of N in molecular-beam epitaxy of GaN x Sb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled.
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