No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Copper oxide resistive switching memory for e-textile
1. D. Marculescu, R. Marculescu, Z. H. Zamora, P. Stanley-Marbell, P. K. Khosla, S. Park, S. Jayaraman, S. Jung, C. Lauterbach, W. Weber, T. Kirstein, D. Cottet, J. Grzyb, G. Troster, M. Jones, T. Martin, and Z. Nakad, Proc. IEEE 91, 1995 (2003).
16. W. C. Chien, Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih, K. Y. Hsieh, R. Liu, and C.-Y. Lu, IEEE Electron Device Lett. 31, 126 (2010).
19. J. W. Han and M. Meyyappan, Mater. Exp., In Press.
20. M. Hansen and K. Anderko, Constitution of Binary Alloys (McGraw-Hill, New York, 1958).
26. R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, H. Hwang, Appl. Phys. Lett. 90, 042107 (2007).
29. P. Zhou, H. B. Lv, M. Yin, L. Tang, Y. L. Song, T. A. Tang, Y. Y. Lin, A. Bao, A. Wu, S. Cai, H. Wu, C. Liang, M. H. Chi, J. Vac. Sci. Technol. B 26, 1030 (2008).
35. S. Kim, K. P. Biju, M. Jo, S. Jung, J. Park, J. Lee, W. Lee, J. Shin, S. Park, and H. Hwang, IEEE Electron Device Lett. 32, 671 (2011).
36. H. Lv, M. Wang, H. Wan, Y. Song, W. Luo, P. Zhou, T. Tang, Y , Lin, R. Huang, S. Song, J. G. Wu, H. M. Wu, and M. H. Chi, Appl. Phys. Lett. 94, 213502 (2009).
38. M. Wang, W. J. Luo, Y. L. Wang, L. M. Yang, W. Zhu, P. Zhou, J. H. Yang, X. G. Gong, and Y. Y. Lin, IEEE Symp. on VLSI Tech . 2010, 89.
Article metrics loading...
A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.
Full text loading...
Most read this month