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Copper oxide resistive switching memory for e-textile
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Figures

Image of FIG. 1.

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FIG. 1.

Schematic illustration and photographic images of the resistive switching function embedded e-textile.

Image of FIG. 2.

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FIG. 2.

(a) SEM images of Cu and CuxO and (b) XRD profile of CuxO.

Image of FIG. 3.

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FIG. 3.

(a) Typical bipolar resistive switching characteristics of Cu/CuxO/Pt structure. (b) Logarithmic plot of I-V characteristics. The device shows a non-linear behavior. At HRS, the I-V shows linear relation at low voltage and then transits to quadratic relation at higher voltage, followed by set process. At LRS, the quadratic relation in I-V is maintained. This conduction mechanism can typically be explained by the trap-controlled space charge limited current.

Image of FIG. 4.

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FIG. 4.

Multiple read operations with reading voltage at 0.5 V. The set and reset states are not affected for a thousand number of operations.

Image of FIG. 5.

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FIG. 5.

(a) Data retention time and (b) switching cycle endurance characteristics. The set and reset pulses were 3 V/60 μsec and -3 V/60 μsec, respectively. The read voltage was set at 0.5 V. A clear sensing window is achieved over 107 seconds and 30 switching cycles.

Tables

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Table I.

Summary of copper-oxide based resistive switching memories.

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/content/aip/journal/adva/1/3/10.1063/1.3645967
2011-09-21
2014-04-16

Abstract

A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

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Scitation: Copper oxide resistive switching memory for e-textile
http://aip.metastore.ingenta.com/content/aip/journal/adva/1/3/10.1063/1.3645967
10.1063/1.3645967
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