No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Mechanism of the performance improvement of TiO2-x -based field-effect transistor using SiO2 as gate insulator
1. M. R. Hoffmann, S. T. Martin, W. Choi, and D. W. Bahemann, Chem. Rev. (Washington, D.C.) 95, 69 (1995).
11. P. H. Wöbkenberg, T. Ishwara, J. Nelson, D. D. C. Bradley, S. A. Haque, and T. D. Anthopoulos, Appl. Phys. Lett. 96, 082116 (2010).
16. N. Zhong, H. Shima, and H. Akinaga, Appl. Phys. Lett. 96, 0842107 (2010).
Article metrics loading...
RF magnetron sputtered titanium oxide (TiO2-x ) thin films were used as active channel layer to fabricate field-effect transistors(FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x /SiO2interface, which was probed by X-ray Photoelectron Spectroscopy(XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x /SiO2interface breaks due to post annealing treatment.
Full text loading...
Most read this month