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Mechanism of the performance improvement of TiO2-x -based field-effect transistor using SiO2 as gate insulator
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RF magnetron sputtered titanium oxide (TiO2-x ) thin films were used as active channel layer to fabricate field-effect transistors(FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x /SiO2interface, which was probed by X-ray Photoelectron Spectroscopy(XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x /SiO2interface breaks due to post annealing treatment.
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