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We report on experimental investigations of the growth of Ge1-xSnxfilm with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnxfilms with various Sn compositions up to 14% are deposited on a Gebuffer layer for growth at low temperatures close to the melting point of Sn. Analysis of various measurements shows that the Ge1-xSnxfilm is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present investigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.


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