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Erratum: “Mechanism of the performance improvement of TiO2-x -based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]
16. N. Zhong, H. Shima, and H. Akinaga, Appl. Phys. Lett. 96, 042107 (2010).http://dx.doi.org/10.1063/1.3299011
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