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1.
1. A. P. Alivisators, Science 271, 933 (1996).
http://dx.doi.org/10.1126/science.271.5251.933
2.
2. J. Britt and C. Ferekides, Appl. Phys. Lett. 62, 2851 (1993).
http://dx.doi.org/10.1063/1.109629
3.
3. C. C. Tu and L. Y. Lin, Appl. Phys. Lett. 93, 163107 (2008).
http://dx.doi.org/10.1063/1.3003883
4.
4. S. M. Sze, Physics of Semiconductor Device (Wiley, New York, 1981).
5.
5. R. M. Ma, L. Dai and G. G. Qin, Nano Lett. 7, 868 (2007).
http://dx.doi.org/10.1021/nl062329+
6.
6. C. S. Lao, J. Liu, P. Gao, L. Zhang, D. Daviovic, R. Tummala and Z. L. Wang, Nano Lett. 6, 263 (2006).
http://dx.doi.org/10.1021/nl052239p
7.
7. W. I. Park, G. C. Yi, J. W. Kim and S. M. Park, Appl. Phys. Lett. 82, 4358 (2003).
http://dx.doi.org/10.1063/1.1584089
8.
8. B. P. Garcia, J. Z. Perez, V. M. Sanjose, J. Colchero and E. P. Lidon, Nano Lett. 7, 1505 (2007).
http://dx.doi.org/10.1021/nl070238m
9.
9. J. D. Olson, Y. W. Rodriguez, L. D. Yang, G. B. Alers, and S. A. Carter, Appl. Phys. Lett. 96, 242103 (2010).
http://dx.doi.org/10.1063/1.3440384
10.
10. G. Konstantatos, and E. H. Sargent, Nature Nanotech. 5, 391 (2010).
http://dx.doi.org/10.1038/nnano.2010.78
11.
11. W. W. Yu, L. Qu, W. Guo, and X. Peng, Chem. Mater. 15, 2854 (2003).
http://dx.doi.org/10.1021/cm034081k
12.
12. R. D. Deegan, O. Bakajin, T. F. Dupont, G. Huber, S. R. Nagel and T. A. Witten, Nature 389, 827 (1997).
http://dx.doi.org/10.1038/39827
13.
13. R. D. Deegan, O. Bakajin, T. F. Dupont, G. Huber, S. R. Nagel, and T. A. Witten, Phys. Rev. E 62, 756 (2000).
http://dx.doi.org/10.1103/PhysRevE.62.756
14.
14. R. D. Deegan, Phys. Rev. E 61, 475 (2000).
http://dx.doi.org/10.1103/PhysRevE.61.475
15.
15. T. P. Bigioni, X. M. Lin, T. T. Nguyen, E. I. Corwin, T. A. Witten, and H. M. Jaegeri, Nature Mater. 5, 265 (2006).
http://dx.doi.org/10.1038/nmat1611
16.
16. J. J. Diao, J. Sun, J. B. Hutchison, and M. E. Reeves, Appl. Phys. Lett. 87, 103113 (2005).
http://dx.doi.org/10.1063/1.2042637
17.
17. J. J. Diao and Q. Cao, AIP Advances 1, 012115 (2011).
http://dx.doi.org/10.1063/1.3568815
18.
18. J. J. Diao, J. B. Hutchison, G. Luo, and M. E. Reeves, J. Chem. Phys. 122, 184710 (2005).
http://dx.doi.org/10.1063/1.1896352
19.
19. J. Huang, A. R. Tao, S. Connor, R. He, and P. Yang, Nano Lett. 6, 524 (2006).
http://dx.doi.org/10.1021/nl060235u
20.
20. J. Huang, F Kim, A. R. Tao, S. Connor and P. Yang, Nature Mater. 4, 896 (2005).
http://dx.doi.org/10.1038/nmat1517
21.
21. C. Farcau, H. Moreira, B. Viallet, J. Grisolia, and L. Ressier, ACS Nano 4, 7275 (2010).
http://dx.doi.org/10.1021/nn102128w
22.
22. C. Farcau, N. M. Sangeetha, H. Moreira, B. Viallet, J. Grisolia, D. C. Pradines, and L. Ressier, ACS Nano 5, 7137 (2011).
http://dx.doi.org/10.1021/nn201833y
23.
23. J. R. Kim, H. Oh, H. M. So, J. J. Kim, J. H. Kim, C. J. Lee and S. C. Lyu, Nanotechnology 13, 701 (2002).
http://dx.doi.org/10.1088/0957-4484/13/5/333
24.
24. R. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger and T. Sands, Nano Lett. 6, 2893 (2006).
http://dx.doi.org/10.1021/nl062152j
25.
25. M. W. Allen and S. M. Durbin, Appl. Phys. Lett. 92, 12110 (2008).
http://dx.doi.org/10.1063/1.2830332
26.
26. D. T. Quan and H. Hbib, Solid-State Electron. 36, 339 (1993).
http://dx.doi.org/10.1016/0038-1101(93)90085-5
27.
27. O. J. Marsh and C. R. Viswanathan, J. Appl. Phys. 38, 3135 (1967).
http://dx.doi.org/10.1063/1.1710077
28.
28. S. Tehrani, J. S. Kim, L. L. Hench, C. M. Van Vilet, and G. Bosman, J. Appl. Phys. 58, 1562 (1985).
http://dx.doi.org/10.1063/1.336042
29.
29. H. P. Hall, M. A. Awaah, and K. Das, Phys. Status Solidi A 201, 522 (2004).
http://dx.doi.org/10.1002/pssa.200306748
30.
30. R. L. Hoffman, J. F. Wagner, M. K. Jayaraj, and J. Tate, J. Appl. Phys. 90, 5763 (2001).
http://dx.doi.org/10.1063/1.1413710
31.
31. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
32.
32. Scott Kirkpatrick, Rev. Mod. Phys. 45, 574 (1973).
http://dx.doi.org/10.1103/RevModPhys.45.574
33.
33. K. Cheng, G. Cheng, S. Wang, L. Li, S. Dai, X. Zhang, B. Zou and Z. Du, New Journal of Physics 9, 214 (2007).
http://dx.doi.org/10.1088/1367-2630/9/7/214
34.
34. T. S. Wong, T. H. Chen, X. Shen, and C. M. Ho, Anal. Chem. 83, 1871 (2011).
http://dx.doi.org/10.1021/ac102963x
35.
35. Z. Zhang, K. Yao, Y. Liu, C. Jin, X. Liang, Q. Chen, and L. M. Peng, Adv. Funct. Mater. 17, 2478 (2007).
http://dx.doi.org/10.1002/adfm.200600475
36.
36. A. Aviram and M. A. Ratner, Chern. Phys. Lett. 29, 277 (1974).
http://dx.doi.org/10.1016/0009-2614(74)85031-1
37.
37. G. J. Ashwell, W. D. Tyrrell, and A. J. Whittam, J. Am. Chem. Soc. 126, 7102 (2004).
http://dx.doi.org/10.1021/ja049633u
38.
38. J. Appenzeller, M. Radosavljevic, J. Knoch, P. Avouris, Phys. Rev. Lett. 92, 048301 (2004).
39.
39. J. Y. Yu, S. W. Chung, J. R. Heath, J. Phys. Chem. B 104, 11864 (2000).
http://dx.doi.org/10.1021/jp993555t
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/content/aip/journal/adva/1/4/10.1063/1.3669408
2011-11-30
2016-12-03

Abstract

We have fabricated nano-Schottky diodes of CdTeQDs with platinum metal electrodes in metal-semiconductor-metal planar configuration by drop-casting. The observed high value of ideality factor (13.3) of the diode was possibly due to the presence of defects in colloidalQDs. We observed asymmetry and non-linear nature of I-V characteristics between forward and reverse directions, which has been explained in terms of size distributions of quantum dots due to coffee ring effect.

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