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We report a simple and potentially mass productive technique to fabricate horizontal single crystalline Si nanowire arrays on insulating substrate based on a self-organized pattern formation mechanism during Xe+ion beamirradiation of Si-on-insulator material. A periodic ripple surfacepattern is created by ion irradiation at 67o incidence angle to the surface normal. The transfer of this pattern to the oxide interface results in an array of electrically disconnected parallel ordered Si nanowires on the insulating oxide. Doping of the nanowires was demonstrated by boron ion implantation and annealing. The morphology and resistivity of the narrow nanowires with large aspect ratio were analysed by cross sectional transmission electron microscopy and scanning spreading resistance microscopy, respectively. Physical reasons of the observed low carrier activation are discussed.


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