Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/2/1/10.1063/1.3681215
1.
1.F. Meyer, M. Zafrany, M. Eizenberg, R. Beserman, C. Schwebel and C. Pellet, J. Appl. Phys. 70, 4268 (1991).
http://dx.doi.org/10.1063/1.349104
2.
2.M. Khater, T. Adam, J. S. Rieh, K. Schonenberg, F. Pagette, K. Stein, S. J. Jeng, D. Ahlgren and G. Freeman, ECS Trans. 3(7), 341 (2006).
http://dx.doi.org/10.1149/1.2355832
3.
3.M. Belyansky, A. Domenicucci, N. Klymko, J. Li and A. Madan, Solid State Technol. 52(2), 26 (2009).
4.
4.S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, IEDM Tech. Digest 61 (2002).
http://dx.doi.org/10.1109/IEDM.2002.1175779
5.
5.Y. F. Tzeng, S. Ku, S. Chang, C. M. Yang, C. S. Chern, J. Lin, N. Hasuike, H. Harima, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, Appl. Phys. Exp. 3, 106601 (2010) .
http://dx.doi.org/10.1143/APEX.3.106601
6.
6.Y. F. Tzeng, S. Ku, S. Chang, C. M. Yang, C. S. Chern, J. Lin, N. Hasuike, H. Harima, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, J. Mater. Res. 26(6), 739 (2011).
http://dx.doi.org/10.1557/jmr.2010.62
7.
7.V. Vartanian, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, ECS Trans. 35(2), 205 (2011).
http://dx.doi.org/10.1149/1.3568862
8.
8.A. Hikavyy, N. D. Nguyen, R. Loo, P. Ryan, M. Wormington, and J. Hopkins, 4th International SiGe Technology and Device Meeting, (ISTDM, Hsinchu, Taiwan, May, 2008), Mon-P105.
9.
9.I. De Wolf, Semicond. Sci. Technol. 11, 139 (1996).
http://dx.doi.org/10.1088/0268-1242/11/2/001
10.
10.I. De Wolf, Spectroscopy Europe 15/2, 6 (2003).
11.
11.A. Ogura, K. Yamasaki, D. Kosemura, S. Tanaka, I. Chiba and R. Shimidzu, Jpn. J. Appl. Phys. 45, 3007 (2006).
http://dx.doi.org/10.1143/JJAP.45.3007
12.
12.M. Yoshikawa, M. Murakami, K. Matsuda, R. Sugie, H. Ishida and R. Shimizu, Jpn. J. Appl. Phys. 45, L486 (2006).
http://dx.doi.org/10.1143/JJAP.45.L486
13.
13.M. Komatsubara, T. Namazu, Y. Nagai, N. Naka, S. Kashiwagi and K. Ohtsuki, Jpn. J. Appl. Phys. 48, 04C021 (2009).
http://dx.doi.org/10.1143/JJAP.48.04C021
14.
14.W. S. Yoo, T. Ueda, and K. Kang, Ext. Abstr. Int. Conf. Solid State Devices and Materials, p. 376 (2008).
15.
15.W. S. Yoo, K. Kang, T. Ueda and T. Ishigaki, Appl. Phys. Exp. 2, 116502 (2009).
http://dx.doi.org/10.1143/APEX.2.116502
16.
16.W. S. Yoo, T. Ueda, T. Ishigaki and K. Kang, ECS Trans. 28(1), 253 (2010).
http://dx.doi.org/10.1149/1.3375609
17.
17.A. D. Trigg, L. H. Yu, C. K. Cheng, R. Kumar, D. L. Kwong, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, Appl. Phys. Exp. 3, 086601 (2010).
http://dx.doi.org/10.1143/APEX.3.086601
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/1/10.1063/1.3681215
Loading
/content/aip/journal/adva/2/1/10.1063/1.3681215
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/2/1/10.1063/1.3681215
2012-01-19
2016-09-29

Abstract

Non-contact monitoring of Ge content and B concentration in single and double Si1-xGexepitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determined by secondary ion mass spectroscopy(SIMS) depth profiling showed very strong correlation with the position and full-width-at-half-maximum of the Si-Si peak from the Si1-xGexepitaxial layers as determined by Raman measurements. High resolution X-ray diffraction (HRXRD) characterization was done for all wafers to determine Ge and B sensitivity and form comparisons with Raman and SIMS analysis. The non-destructive, in-line monitoring of Ge content and B concentration of single and double Si1-xGexepitaxial layers with thickness ranging from 5 ∼ 120 nm, on small area monitoring pads, was successfully demonstrated by multiwavelength micro-Raman spectroscopy during epitaxial process optimization, material property verification, and quality control applications.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/2/1/1.3681215.html;jsessionid=IFkil1XtkxnIBgGvdReN7pXQ.x-aip-live-06?itemId=/content/aip/journal/adva/2/1/10.1063/1.3681215&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/2/1/10.1063/1.3681215&pageURL=http://scitation.aip.org/content/aip/journal/adva/2/1/10.1063/1.3681215'
Right1,Right2,Right3,