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Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si1-xGex epitaxial films using multiwavelength micro-Raman spectroscopy
2.M. Khater, T. Adam, J. S. Rieh, K. Schonenberg, F. Pagette, K. Stein, S. J. Jeng, D. Ahlgren and G. Freeman, ECS Trans. 3(7), 341 (2006).
3.M. Belyansky, A. Domenicucci, N. Klymko, J. Li and A. Madan, Solid State Technol. 52(2), 26 (2009).
4.S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, IEDM Tech. Digest 61 (2002).
5.Y. F. Tzeng, S. Ku, S. Chang, C. M. Yang, C. S. Chern, J. Lin, N. Hasuike, H. Harima, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, Appl. Phys. Exp. 3, 106601 (2010) .
6.Y. F. Tzeng, S. Ku, S. Chang, C. M. Yang, C. S. Chern, J. Lin, N. Hasuike, H. Harima, T. Ueda, T. Ishigaki, K. Kang and W. S. Yoo, J. Mater. Res. 26(6), 739 (2011).
8.A. Hikavyy, N. D. Nguyen, R. Loo, P. Ryan, M. Wormington, and J. Hopkins, 4th International SiGe Technology and Device Meeting, (ISTDM, Hsinchu, Taiwan, May, 2008), Mon-P1–05.
10.I. De Wolf, Spectroscopy Europe 15/2, 6 (2003).
14.W. S. Yoo, T. Ueda, and K. Kang, Ext. Abstr. Int. Conf. Solid State Devices and Materials, p. 376 (2008).
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Non-contact monitoring of Ge content and B concentration in single and double Si1-xGexepitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determined by secondary ion mass spectroscopy(SIMS) depth profiling showed very strong correlation with the position and full-width-at-half-maximum of the Si-Si peak from the Si1-xGexepitaxial layers as determined by Raman measurements. High resolution X-ray diffraction (HRXRD) characterization was done for all wafers to determine Ge and B sensitivity and form comparisons with Raman and SIMS analysis. The non-destructive, in-line monitoring of Ge content and B concentration of single and double Si1-xGexepitaxial layers with thickness ranging from 5 ∼ 120 nm, on small area monitoring pads, was successfully demonstrated by multiwavelength micro-Raman spectroscopy during epitaxial process optimization, material property verification, and quality control applications.
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