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Towards nonvolatile memory devices based on ferroelectric polymers
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1.
1. R. C. G. Naber, K. Asadi, P. W. M. Bloem, D. M. de Leeuw, and B. de Boer, Adv. Mat. 22, 933 (2010).
2.
2. H. Kawai, Jpn. J. Appl. Phys. 8, 975 (1969).
http://dx.doi.org/10.1143/JJAP.8.975
3.
3. T. Furukawa, M. Date and E. Fukada, J. Appl. Phys. 51(2), 1135 (1980).
http://dx.doi.org/10.1063/1.327723
4.
4. T. Furukawa, Phase Transitions. 18, 143 (1989).
http://dx.doi.org/10.1080/01411598908206863
5.
5. K. Muller, K. Henkel, D. Mandel, B. Seime, I. Paloumpa, and D. Schmeisser, Phys. Status Solidi A 208(2), 330 (2011).
http://dx.doi.org/10.1002/pssa.201026593
6.
6. A. V. Bune, V. M. Fridkin, S. Ducharme, L. M. Blinov, S. P. Palto, A. V. Sorokin, S. G. Yudin, and A. Zlatkin, Nature 391, 874 (1998).
http://dx.doi.org/10.1038/36069
7.
7. Q. M. Zhang, V. Bhari, and X. Zhao, Science 280, 2101 (1998).
http://dx.doi.org/10.1126/science.280.5372.2101
8.
8. T. Furukawa, M. Date, M. Ohuchi, and A. Chiba, J. Appl. Phys. 56(5), 1481 (1984).
http://dx.doi.org/10.1063/1.334102
9.
9. T. Furukawa, H. Matsuzaki, M. Shiima and Y. Tajitsu, Jpn. J. Appl. Phys. 24, L661 (1985).
http://dx.doi.org/10.1143/JJAP.24.L661
10.
10. T. Nakajima, Y. Takahashi, S. Okamura, and T. Furukawa, Jpn. J. Appl. Phys. 48, 09KE04 (4 pages) (2009).
http://dx.doi.org/10.1143/JJAP.48.09KE04
11.
11. H. Gudesen, P. Nordal, WO 03/021601, see http://thinfilm.no/.
12.
12. G. –G. Lee, E. Tokumitsu, S. –M. Yoon, Y. Fujisaki, J. –W. Yoon, H. Ishikawa, Appl. Phys. Lett. 99, 012901 (2011).
http://dx.doi.org/10.1063/1.3608145
13.
13. P. Sharma, T. Reece, S. Ducharme, and A. Gruverman, Nano Lett. 11, 1970 (2011).
http://dx.doi.org/10.1021/nl200221z
14.
14. H. Xu, X. Fang, X. Liu, S. Wu, Y. Gu, X. Meng, J. Sun, J. Chu, J. Appl. Polym. Sci. 120, 1510 (2011).
http://dx.doi.org/10.1002/app.33291
15.
15. T. Furukawa, Phase Trans. 18, 143 (1989).
http://dx.doi.org/10.1080/01411598908206863
16.
16. R. C. G. Naber, P. W. M. Blom, A. W. Marsman, and D. M. de Leeuw, Appl. Phys. Lett. 85, 2032 (2004).
http://dx.doi.org/10.1063/1.1788885
17.
17. H. Xu, J. Zhong, X. Liu, J. Chen, and D. Shen., Appl. Phys. Lett. 90, 092903 (2007).
http://dx.doi.org/10.1063/1.2710477
18.
18. N. Tsutsumi and M. Otsuji, J. Appl. Phys. 102, 104101 (2007).
http://dx.doi.org/10.1063/1.2815636
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Figures

Image of FIG. 1.

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FIG. 1.

AFM image of the sample film.

Image of FIG. 2.

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FIG. 2.

Schematic diagram of the electrical measurement including an AFM equipment.

Image of FIG. 3.

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FIG. 3.

Example of subtraction of capacitance and resistivity terms from the total current J to obtain dP/dt. Solid curve: the total current J measured. Dashed curve: dP/dt after subtraction of capacitance term with dielectric constant ɛ = 4.6 and resistance term with resistivity ρ = 5.0 × 109 ohm-cm.

Image of FIG. 4.

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FIG. 4.

(a) Normalized switching currents (measured current is normalized by peak current) when applying the sinusoidal electric field when the frequency is changed in the range of 10 Hz – 100 kHz. (b) Schematic picture for rotating dipoles around main axis when sinusoidal electric field is applied. Black sphere is carbon atom, yellow one is hydrogen and red one is florin. (c) Hysteresis curves obtained by the integration of dP/dt when the frequency is changed in the range of 10 Hz – 100 kHz.

Image of FIG. 5.

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FIG. 5.

Plots of switching speed as a function of switching frequency.

Image of FIG. 6.

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FIG. 6.

Plots of switching time as a function of onset electric field from which the large switching current flows.

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/content/aip/journal/adva/2/1/10.1063/1.3691825
2012-02-23
2014-04-25

Abstract

We show the ferroelectric switching of a thin film of the copolymer of 60 mol% vinylidene fluoride and 40 mol% trifluoroethylene when it is subjected to a sinusoidal electric field from 10 Hz to 100 kHz using a conductive probe chip of AFM. A switching speed of 1.6 ×106 s-1 (switching time of 660 ns) was measured at 100 kHz switching.

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Scitation: Towards nonvolatile memory devices based on ferroelectric polymers
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/1/10.1063/1.3691825
10.1063/1.3691825
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