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Formation of ordered one-dimensional microstructures of dislocations in near-surface layer of semiconductor, under laser radiation with microstructured distribution of intensity
1. N. M. Ghoniemand and D. Walgraef, Istabilities and Self-Organization in Materials, Volume I, Fundamentals of Nanoscience (Oxford University Press, I–1, March 2008).
3. A. F. Banishev, V. I. Emel'yanov and M. M. Novikov, “Defect Ordering and Changes in Silicon Surface Morphology under Linearly Polarized Millisecond Pulsed Laser Irradiation,” Laser Physics 2, 178 (1992).
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The paper presents the results of investigation the process of formation of the ordered microstructures of dislocations in the near-surface layer a single-crystal plate of silicon under the action of pulsed laser radiation with microstructured distribution intensity. It has been found that generation of the ordered one-dimensional microstructures of dislocations takes place. The period of these ordered microstructures is d≈3÷4 μm. A combination of one-dimensional structures of dislocations produces ordered two-dimensional structure of dislocations.
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