1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
oa
Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
Rent:
Rent this article for
Access full text Article
/content/aip/journal/adva/2/1/10.1063/1.3698156
1.
1. R. K. Wong, M. S. Thesis (April 2000) University of California, Berkeley, Dept. of Materials Science and Mineral engineering.
2.
2. T. Nanjo, M. Takeuchi, M. Sita, T. Oishi, Y. Yokuda, and Y. Aoyagi, Appl. Phys. Express 1, 0111011 (2008).
http://dx.doi.org/10.1143/APEX.1.011101
3.
3. A. Uskov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev, V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, and V. Ratnikov, Mater. Res. Soc.Symp. Proc. 831, E825 (2005).
4.
4. H. Yu, E. Ulker, and E. Ozbay, J. Crystal Growth 289, 419 (2006).
http://dx.doi.org/10.1016/j.jcrysgro.2005.11.109
5.
5. H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, N. Kamata, T. takano, and K. Tsubaki, Proc. SPIE 7216, 7216211 (2009).
http://dx.doi.org/10.1117/12.809729
6.
6. H. Yu, W. Strupinski, S. Butun, and E. Ozbay, Phys. Stat sol (a) 203, 868 (2006).
http://dx.doi.org/10.1002/pssa.200521461
7.
7. A. Khan and K. Balakrishnan, Materials Science Forum 490, 41 (2008).
8.
8. Q. Wei, Z. Wu, K. Sun, F. A. Ponce, J. Herkom, and F. Scolz, Appl. Phys. Express 2, 121001 (2009).
http://dx.doi.org/10.1143/APEX.2.121001
9.
9. C. F. G. Van De Walle, C. Stampel, and J. Neugebauer, arXIV:Cond-mat/10385V1, 1 (1998).
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/1/10.1063/1.3698156
Loading
/content/aip/journal/adva/2/1/10.1063/1.3698156
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/2/1/10.1063/1.3698156
2012-03-21
2014-08-30

Abstract

A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/2/1/1.3698156.html;jsessionid=83kg12lko2arh.x-aip-live-06?itemId=/content/aip/journal/adva/2/1/10.1063/1.3698156&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/1/10.1063/1.3698156
10.1063/1.3698156
SEARCH_EXPAND_ITEM