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Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
1. R. K. Wong, M. S. Thesis (April 2000) University of California, Berkeley, Dept. of Materials Science and Mineral engineering.
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7. A. Khan and K. Balakrishnan, Materials Science Forum 490, 41 (2008).
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A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer.
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