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Defect-induced room temperature ferromagnetism in un-doped InN film
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Diluted magnetic semiconductors(DMSs), with the Curie temperature at room temperature, are of technological and fundamental importance. Defect engineering has been an effective way to introduce magnetic moments in various non-magnetic systems. Here we show firstly, InN film directly grown on (0001)-oriented Al2O3 substrate with In deficiency is ferromagnetic with its Curie temperature as high as 297K. The undesirable large lattice mismatch between the film and substrate leads to a peculiar surface structure that the film separates into distinct In-rich and In-poor regions. Our first-principles calculations suggest the defect of In-vacancy is responsible for the magnetism. A local magnetic moment of 2.5μB is found, in agreement with experimental results. Our findings demonstrate that room-temperature ferromagnetism can also be induced in narrow band gap semiconductors through defect engineering, which remains largely unexplored so far.
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