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Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors
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Figures

Image of FIG. 1.

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FIG. 1.

Typical output I DS -V DS and transfer I DS -V GS curves of OFETs: (a), (d) before exposure to air; (b), (e): after exposure to air for 7 days; (c), (f): after exposure to air for 30 days. The channel width and length of all the OFETs are 10 mm and 100 μm, respectively.

Image of FIG. 2.

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FIG. 2.

Surface morphology of the pentacene film at the channel region in air: (a) before exposure to air; (b) after exposure to air for 30 days.

Image of FIG. 3.

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FIG. 3.

AFM flat surface and three dimensions images of the pentacene film upon the source/drain electrodes: (a), (c) before exposure to air; (b), (d) after exposure to air for 30 days.

Image of FIG. 4.

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FIG. 4.

(a) Total resistance R total of OFETs with different channel length: before and after exposure to air for 1, 7, 20, 30 days; (b) contact resistance R C and channel resistance R channel of OFETs before and after exposure to air for 1, 7, 20, 30 days.

Tables

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Table I.

Saturation current I SD , off current I off , field-effect mobility μ, and threshold voltage V T , of the OFET before and after exposure to air for 1, 7, 20, 30 days.

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/content/aip/journal/adva/2/2/10.1063/1.4707164
2012-04-18
2014-04-17

Abstract

Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D) contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

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Scitation: Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/2/10.1063/1.4707164
10.1063/1.4707164
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