Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488492 (2004).
2. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, Adv. Mater. 17, 590594 (2005).
3. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. 82, 11171119 (2003).
4. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733735 (2003).
5. C. J. Kao, Y. W. Kwon, Y. W. Heo, D. P. Norton, S. J. Pearton, F. Ren, and G. C. Chi, J. Vac. Sci. Technol., B 23, 10241028 (2005).
6. H. H. Hsieh and C. C. Wu, Appl. Phys. Lett. 91, 013502 (2007).
7. L. Zhang, J. Li, X. W. Zhang, X. Y. Jiang, and Z. L. Zhang, Appl. Phys. Lett. 95, 072112 (2009).
8. A. Bashir, P. H. Wobkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, and T. D. Anthopoulos, Adv. Mater. 21, 22262231 (2009).
9. P. F. Carcia, R. S. McLean, and M. H. Reilly, Journal of the Society for Information Display 13, 547554 (2005).
10. H. S. Bae, J. H. Kim, and S. Im, Electrochem. Solid-State Lett. 7, G279G281 (2004).
11. K. Remashan, D. K. Hwang, S. J. Park, and J. H. Jang, Jpn. J. Appl. Phys. 47, 28482853 (2008).
12. C. H. Ahn, D. K. Seo, C. H. Woo, and H. K. Cho, Physica B-Condensed Matter 404, 48354838 (2009).
13. J. J. Kim, J. Y. Bak, J. H. Lee, H. S. Kim, N. W. Jang, Y. Yun, and W. J. Lee, Thin Solid Films 518, 30223025 (2010).
14. J. S. Park, J. Electroceram. 25, 145149 (2010).
15. J. Zhang, X. F. Li, J. G. Lu, Z. Z. Ye, L. Gong, P. Wu, J. Huang, Y. Z. Zhang, L. X. Chen, and B. H. Zhao, J. Appl. Phys. 110, 084509 (2011).
16. D. Hong, G. Yerubandi, H. Q. Chiang, M. C. Spiegelberg, and J. F. Wager, Crit. Rev. Solid State Mater. Sci. 33, 101132 (2008).
17. J. Park, C. Kim, S. Kim, H. Song, S. Kim, D. Kang, H. Lim, H. Yin, R. Jung, E. Lee, J. Lee, K. W. Kwon, and Y. Park, IEEE Electron Device Lett. 29, 879881 (2008).

Data & Media loading...


Article metrics loading...



The effects of post-annealing on performance of ZnO-based thin-film transistors(TFTs)fabricated at room temperature were investigated. It was observed that high-temperature annealing resulted in a large decrease in resistivity of the ZnO channel layer and caused a large off-state current for ZnOTFTs, while low-temperature annealing had little effect on the off-state current. The evolution of electrical performance of ZnOTFTsannealed at a lower temperature showed that the threshold voltage decreased greatly and the sub-threshold slope improved evidently without great change of the resistivity of the ZnO channel as the annealing time prolonged. The possible mechanism is that the traps have been removed without activating the donor defects in the ZnO channel layer.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd