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Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
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1.
1. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
http://dx.doi.org/10.1126/science.283.5403.822
2.
2. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 93, 076601 (2004).
http://dx.doi.org/10.1103/PhysRevLett.93.076601
3.
3. J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202R (2003).
http://dx.doi.org/10.1103/PhysRevB.68.041202
4.
4. A. R. Volkel, R. A. Street, and D. Knipp, Phys. Rev. B. 66, 195336 (2002).
http://dx.doi.org/10.1103/PhysRevB.66.195336
5.
5. Y. S. Yang, S. H. Kim, J.-I. Lee, H. Y. Chu, L.-M. Do, H. Lee, J. Oh, T. Zyung, M. K. Ryu, and M. S. Jang, Appl. Phys. Lett. 80, 1595 (2002).
http://dx.doi.org/10.1063/1.1459117
6.
6. V. Nadazdy, R. Durny, J. Puigdollers, C. Voz, S. Cheylan, and K. Gmucova, Appl. Phys. Lett. 90, 092112 (2007).
http://dx.doi.org/10.1063/1.2710203
7.
7. X. C. Ren, S. M. Wang, C. W. Leung, F. Yan, and P. K. L. Chan, Appl. Phys. Lett. 99, 043303 (2011).
http://dx.doi.org/10.1063/1.3617477
8.
8. D. Tondelier, K. Lmimouni, D. Vuillaume, C. Fery, and G. Haas, Appl. Phys. Lett. 85, 5763 (2004).
http://dx.doi.org/10.1063/1.1829166
9.
9. K. J. Baeg, Y. Y. Noh, J. Ghim, S. J. Kang, H. Lee, and D. Y. Kim, Adv. Mater. 18, 3179 (2006).
http://dx.doi.org/10.1002/adma.200601434
10.
10. W. L. Leong, P. S. Lee, S. G. Mhaisalkar, T. P. Chen, and A. Dodabalapur, Appl. Phys. Lett. 90, 042906 (2007).
http://dx.doi.org/10.1063/1.2435598
11.
11. M. Weis, K. Gmucova, V. Nadazdy, I. Capek, A. Satka, M. Kopani, J. Cirak, and E. Majkova, J. Nanosci. Nanotechnol. 8, 5684 (2008).
http://dx.doi.org/10.1166/jnn.2008.214
12.
12. S. Sun, H. Zeng, D. B. Robinson, S. Raoux, P. M. Rice, S. X. Wang, and G. Li, J. Am. Chem. Soc. 126, 273 (2004).
http://dx.doi.org/10.1021/ja0380852
13.
13. K. Lee, M. Weis, J. Lin, D. Taguchi, E. Majkova, T. Manaka, and M. Iwamoto, J. Appl. Phys. 109, 064512 (2011).
http://dx.doi.org/10.1063/1.3567916
14.
14. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron 47, 297 (2003).
http://dx.doi.org/10.1016/S0038-1101(02)00210-1
15.
15. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, J. Appl. Phys. 100, 24509 (2006).
http://dx.doi.org/10.1063/1.2215132
16.
16. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 93, 6117 (2003).
http://dx.doi.org/10.1063/1.1568157
17.
17. K. Lee, M. Weis, W. Ou-Yang, D. Taguchi, T. Manaka, and M. Iwamoto, Jpn. J. Appl. Phys. 50, 041601 (2011).
http://dx.doi.org/10.1143/JJAP.50.041601
18.
18. J. Bisquert, Phys. Rev. B. 77, 235203 (2008).
http://dx.doi.org/10.1103/PhysRevB.77.235203
19.
19. S. Kochowski, K. Nitsch, B. Paszkiewicz, and R. Paszkiewicz, Thin Solid Films 444, 208 (2003).
http://dx.doi.org/10.1016/S0040-6090(03)01024-1
20.
20. J. van de Lagemaat, N.-G. Park, and A. J. Frank, J. Phys. Chem. B 104, 2044 (2000).
http://dx.doi.org/10.1021/jp993172v
21.
21. P. G. Le Comber and W. E. Spear, Phys. Rev. Lett. 25, 509 (1970).
http://dx.doi.org/10.1103/PhysRevLett.25.509
22.
22. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
http://dx.doi.org/10.1063/1.373091
23.
23. V. Nádaždy, R. Durný, J. Puigdollers, C. Voz, S. Cheylan, and M. Weis, J. Non-Cryst. Sol. 354, 2888 (2008).
http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.095
24.
24. O. Engström and A. Alm, J. Appl. Phys. 54, 5240 (1983).
http://dx.doi.org/10.1063/1.332751
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/content/aip/journal/adva/2/2/10.1063/1.4720399
2012-05-15
2014-07-24

Abstract

A silver nanoparticles self-assembledmonolayer(SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (IV) and impedance spectroscopy (IS) measurements. The IV results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

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Scitation: Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/2/10.1063/1.4720399
10.1063/1.4720399
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