Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.Antonio Luque and Steven Hegedus, Handbook of Photovoltaic Science and Engineering (John Wiley & Sons Ltd, England, 2003).
2.S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices (John Willey & Sons, New Jersey, 2007).
3.M. Zapata-Torres, F. Chale-Lara, R. Castro-Rodríguez, O. Calzadilla Amaya, M. Meléndez-Lira, and J. L. Peña, “Producción de películas delgadas de CdSxTe1-x con estructura cúbica para 0 ≤ x≤ 1,” Rev. Mex. Fís. 51(2), 138 (2005).
4.Nazar Abbas Shah, Abid Ali, and Asghari Maqsood, “Preparation and characterization of CdTe for solar cells, detectors and related thin-film materials,” J. Electron. Mater. 37, 145 (2008).
5.M. Sotelo-Lerma, R. A. Zingaro, and S. J. Castillo, “Preparation of CdTe coatings using the chemical deposition method,” J. Organomet. Chem. 623, 81 (2001).
6.A. Picos-Vega, M. Becerril, O. Zelaya-Angel, R. Ramírez-Bon, J. Espinoza-Beltrán, J. González-Hernández, and S. Jiménez-Sandoval, “Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets,” J. Appl. Phys. 83, 760 (1998).
7.M. González-Alcudia, M. Zapata-Torres, M. Meléndez-Lira, and O. Calzadilla-Amaya, “Microstructural analysis for europium in CdTe films,” Superlattices Microstruct. 43, 570 (2008).
8.W. P. Shen and H. S. Kwok, “Crystalline phases of II-VI compound semiconductors grown by pulsed laser deposition,” Appl. Phys. Lett. 65(17), 2162 (1994).
9.M. González-Alcudia, A. Márquez-Herrera, M. Zapata-Torres, M. Meléndez-Lira, and O. Calzadilla-Amaya, “Cadmium sulfide pellets for growth of thin films by pulsed laser deposition,” Adv. Tech. Mat. Mat. Proc. J. 9, 81 (2007).
10.JCPDS powder diffraction files, card number 15-0770 for cubic CdTe.
11.JCPDS powder diffraction files, card number 19-0192 for hexagonal CdTe.
12.S. K. Pandey, Umesh Tiwari, R. Raman, Chandra Prakash, Vamsi Krishna, Viresh Dutta, and K. Zimik, “Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition,” Thin Solid Films 473, 54 (2005).
13.M. Becerril, O. Zelaya-Angel, A. C. Medina-Torres, J. R. Aguilar-Hernández, R. Ramírez-Bon, and F. J. Espinoza-Beltrán, “Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films,” J. Cryst. Growth 311, 1245 (2009).
14.P. M. Amirtharaj and Fred H. Pollak, “Raman scattering study of the properties and removal of excess Te on CdTe surfaces,” Appl. Phys. Lett. 45(7), 789 (1984).
15.J. I. Pankove, Optical processes in semiconductors (Prentice-Hall, Inc, New Jersey, 1971).
16.H. Khallaf, G. Chai, O. Lupan, L. Chow, H. Heinrich, S. Park, and A. Schulte, “In-situ boron doping of chemical-bath deposited CdS thin films,” Phys. Status Solidi A 206, 256 (2009).

Data & Media loading...


Article metrics loading...



Cu-doped CdTethin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd