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/content/aip/journal/adva/2/2/10.1063/1.4721275
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/content/aip/journal/adva/2/2/10.1063/1.4721275
2012-05-16
2016-09-26

Abstract

Cu-doped CdTethin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

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