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The trapping properties of in-situmetal-organic chemical vapor deposition(MOCVD) grown AlN/AlGaN/GaN metal-insulator-semiconductorheterostructurefield-effect transistors (MIS-HFETs) with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (D T-AlN ) and AlGaN layers (D T-AlGaN ) respectively. The MIS-HFET grown at 600 °C showed a minimum D T-AlN and D T-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (E T ) -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (I ds-max ). Meanwhile, MIS-HFET grown at 700 °C had more degradation in I ds-max ∼26 %, due to high D T-AlN and D T-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar E T. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.


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