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Growth and characterization of Bi2Se3 crystals by chemical vapor transport
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1.
1. J. E. Moore, Nature 464, 194 (2010);
http://dx.doi.org/10.1038/nature08916
1.X.-L. Qi and S.-C. Zhang, Phys. Today 63, 33 (2010);
http://dx.doi.org/10.1063/1.3293411
1.M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
http://dx.doi.org/10.1103/RevModPhys.82.3045
2.
2. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
http://dx.doi.org/10.1038/nphys1270
3.
3. Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009).
http://dx.doi.org/10.1038/nphys1274
4.
4. Y. S. Hor, A. J. Williams, J. G. Checkelsky, P. Roushan, J. Seo, Q. Xu, H. W. Zandbergen, A. Yazdani, N. P. Ong, and R. J. Cava, Phys. Rev. Lett. 104, 057001 (2010).
http://dx.doi.org/10.1103/PhysRevLett.104.057001
5.
5. H. Köhler, Phys. Status Solidi B 58, 91 (1973).
http://dx.doi.org/10.1002/pssb.2220580109
6.
6. J. G. Analytis, R. D. McDonald, S. C. Riggs, J. H. Chu, G. S. Boebinger, and I. R. Fisher, Nat. Phys. 6, 960 (2010).
http://dx.doi.org/10.1038/nphys1861
7.
7. H. M. Benia, C. T. Lin, K. Kern, and C. R. Ast, Phys. Rev. Lett. 107, 177602 (2011).
http://dx.doi.org/10.1103/PhysRevLett.107.177602
8.
8. Z. Ren, A. A. Taskin, S. Sasaki, K. Segawa, and Y. Ando, Phys. Rev. B 84, 075316 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.075316
9.
9. Xi Chen, Xu-Cun Ma, Ke He, Jin-Feng Jia, and Qi-Kun Xue, Adv. Mater. 23, 1162 (2011).
http://dx.doi.org/10.1002/adma.201003855
10.
10. G. H. Zhang, H. J. Qin, J. Teng, J. D. Guo, Q. L. Guo, X. Dai, Z. Fang, and K. H. Wu, Appl. Phys. Lett. 95, 053114 (2009).
http://dx.doi.org/10.1063/1.3200237
11.
11. A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, and N. Samarth, Appl. Phys. Lett. 97, 262104 (2010).
http://dx.doi.org/10.1063/1.3532845
12.
12. X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, and K. L. Wang, Appl. Phys. Lett. 98, 242102 (2011).
http://dx.doi.org/10.1063/1.3599540
13.
13. Phillip Tabor, Cameron Keenan, Sergei Urazdhin, and David Lederman, Appl. Phys. Lett. 99, 013111 (2011).
http://dx.doi.org/10.1063/1.3609326
14.
14. Desheng Kong, Jason C. Randel, Hailin Peng, Judy J. Cha, Stefan Meister, Keji Lai, Yulin Chen, Zhi-Xun Shen, Hari C. Manoharan, and Yi Cui, Nano Lett. 10, 329 (2010);
http://dx.doi.org/10.1021/nl903663a
14.Desheng Kong, Wenhui Dang, Judy J. Cha, Hui Li, Stefan Meister, Hailin Peng, Zhongfan Liu, and Yi Cui, Nano Lett. 10, 2245 (2010).
http://dx.doi.org/10.1021/nl101260j
15.
15. S. Y. F. Zhao, C. Beekman, L. J. Sandilands, J. E. J. Bashucky, D. Kwok, N. Lee, A. D. LaForge, S. W. Cheong, and K. S. Burch, Appl. Phys. Lett. 98, 141911 (2011).
http://dx.doi.org/10.1063/1.3573868
16.
16. R. Nitsche, H. U. Bolsterli, and M. Lichtensteiger, J. Phys. Chem. Solids 21, 199 (1961);
http://dx.doi.org/10.1016/0022-3697(61)90098-1
16.H. Schäfer, Chemical Transport Reactions (Academic Press, New York, 1963).
17.
17. D. Cubicciotti and F. J. Keneshea, J. Phys. Chem. 63, 295 (1959);
http://dx.doi.org/10.1021/j150572a038
17.J. H. Kim and S. Blairs, J. Chem. Thermodyn. 22, 803 (1990).
http://dx.doi.org/10.1016/0021-9614(90)90072-X
18.
18. R. W. G. Wyckoff, Crystal Structures 2 (J. Wiley and Sons, New York, 1964);
18.L. Pauling, Am. Mineral. 60, 994 (1975).
19.
19. K. Kuroda, M. Arita, K. Miyamoto, M. Ye, J. Jiang, A. Kimura, E. E. Krasovskii, E. V. Chulkov, H. Iwasawa, T. Okuda, K. Shimada, Y. Ueda, H. Namatame, and M. Taniguchi, Phys. Rev. Lett. 105, 076802 (2010);
http://dx.doi.org/10.1103/PhysRevLett.105.076802
19.J. G. Analytis, J. H. Chu, Y. L. Chen, F. Corredor, R. D. McDonald, Z. X. Shen, and I. R. Fisher, Phys. Rev. B 81, 205407 (2010).
http://dx.doi.org/10.1103/PhysRevB.81.205407
20.
20. T. Plechacek, J. Navratil, and J. Horak, J. Solid State Chem. 165, 35 (2002).
http://dx.doi.org/10.1006/jssc.2001.9486
21.
21. Y. S. Hor, A. Richardella, P. Roushan, Y. Xia, J. G. Checkelsky, A. Yazdani, M. Z. Hasan, N. P. Ong, and R. J. Cava, Phys. Rev. B 79, 195208 (2009).
http://dx.doi.org/10.1103/PhysRevB.79.195208
22.
22. N. P. Butch, K. Kirshenbaum, P. Syers, A. B. Sushkov, G. S. Jenkins, H. D. Drew, and J. Paglione, Phys. Rev. B 81, 241301R (2010).
http://dx.doi.org/10.1103/PhysRevB.81.241301
23.
23. K. Eto, Z. Ren, A. A. Taskin, K. Segawa, and Y. Ando, Phys. Rev. B 81, 195309 (2010).
http://dx.doi.org/10.1103/PhysRevB.81.195309
24.
24. Z. Ren, A. A. Taskin, S. Sasaki, K. Segawa, and Y. Ando, Phys. Rev. B 82, 241306R (2010).
http://dx.doi.org/10.1103/PhysRevB.82.241306
25.
25. J. L. Zhang, S. J. Zhang, H. M. Weng, W. Zhang, L. X. Yang, Q. Q. Liu, S. M. Feng, X. C. Wang, R. C. Yu, L. Z. Cao, L. Wang, W. G. Yang, H. Z. Liu, W. Y. Zhao, S. C. Zhang, X. Dai, Z. Fang, and C. Q. Jin, Proc. Natl. Acad. Sci. USA 108, 24 (2011);
http://dx.doi.org/10.1073/pnas.1014085108
25.Chao Zhang, Liling Sun, Zhaoyu Chen, Xingjiang Zhou, Qi Wu, Wei Yi, Jing Guo, Xiaoli Dong, and Zhongxian Zhao, Phys. Rev. B 83, 104504R (2011).
http://dx.doi.org/10.1103/PhysRevB.83.104504
26.
26. S. M. Young, S. Chowdhury, E. J. Walter, E. J. Mele, C. L. Kane, and A. M. Rappe, Phys. Rev. B 84, 085106 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.085106
27.
27. J. J. Hamlin, J. R. Jeffries, N. P. Butch, P. Syers, D. A. Zocco, S. T. Weir, Y. K. Vohra, J. Paglione, and M. B. Maple, J. Phys. Condensed Matter 24, 035602 (2012).
http://dx.doi.org/10.1088/0953-8984/24/3/035602
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/content/aip/journal/adva/2/2/10.1063/1.4727957
2012-06-04
2014-10-20

Abstract

Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

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Scitation: Growth and characterization of Bi2Se3 crystals by chemical vapor transport
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/2/10.1063/1.4727957
10.1063/1.4727957
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