NOTICE: Scitation Maintenance Sunday, March 1, 2015.

Scitation users may experience brief connectivity issues on Sunday, March 1, 2015 between 12:00 AM and 7:00 AM EST due to planned network maintenance.

Thank you for your patience during this process.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. J. E. Moore, Nature 464, 194 (2010);
1.X.-L. Qi and S.-C. Zhang, Phys. Today 63, 33 (2010);
1.M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
2. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
3. Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009).
4. Y. S. Hor, A. J. Williams, J. G. Checkelsky, P. Roushan, J. Seo, Q. Xu, H. W. Zandbergen, A. Yazdani, N. P. Ong, and R. J. Cava, Phys. Rev. Lett. 104, 057001 (2010).
5. H. Köhler, Phys. Status Solidi B 58, 91 (1973).
6. J. G. Analytis, R. D. McDonald, S. C. Riggs, J. H. Chu, G. S. Boebinger, and I. R. Fisher, Nat. Phys. 6, 960 (2010).
7. H. M. Benia, C. T. Lin, K. Kern, and C. R. Ast, Phys. Rev. Lett. 107, 177602 (2011).
8. Z. Ren, A. A. Taskin, S. Sasaki, K. Segawa, and Y. Ando, Phys. Rev. B 84, 075316 (2011).
9. Xi Chen, Xu-Cun Ma, Ke He, Jin-Feng Jia, and Qi-Kun Xue, Adv. Mater. 23, 1162 (2011).
10. G. H. Zhang, H. J. Qin, J. Teng, J. D. Guo, Q. L. Guo, X. Dai, Z. Fang, and K. H. Wu, Appl. Phys. Lett. 95, 053114 (2009).
11. A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, and N. Samarth, Appl. Phys. Lett. 97, 262104 (2010).
12. X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, and K. L. Wang, Appl. Phys. Lett. 98, 242102 (2011).
13. Phillip Tabor, Cameron Keenan, Sergei Urazdhin, and David Lederman, Appl. Phys. Lett. 99, 013111 (2011).
14. Desheng Kong, Jason C. Randel, Hailin Peng, Judy J. Cha, Stefan Meister, Keji Lai, Yulin Chen, Zhi-Xun Shen, Hari C. Manoharan, and Yi Cui, Nano Lett. 10, 329 (2010);
14.Desheng Kong, Wenhui Dang, Judy J. Cha, Hui Li, Stefan Meister, Hailin Peng, Zhongfan Liu, and Yi Cui, Nano Lett. 10, 2245 (2010).
15. S. Y. F. Zhao, C. Beekman, L. J. Sandilands, J. E. J. Bashucky, D. Kwok, N. Lee, A. D. LaForge, S. W. Cheong, and K. S. Burch, Appl. Phys. Lett. 98, 141911 (2011).
16. R. Nitsche, H. U. Bolsterli, and M. Lichtensteiger, J. Phys. Chem. Solids 21, 199 (1961);
16.H. Schäfer, Chemical Transport Reactions (Academic Press, New York, 1963).
17. D. Cubicciotti and F. J. Keneshea, J. Phys. Chem. 63, 295 (1959);
17.J. H. Kim and S. Blairs, J. Chem. Thermodyn. 22, 803 (1990).
18. R. W. G. Wyckoff, Crystal Structures 2 (J. Wiley and Sons, New York, 1964);
18.L. Pauling, Am. Mineral. 60, 994 (1975).
19. K. Kuroda, M. Arita, K. Miyamoto, M. Ye, J. Jiang, A. Kimura, E. E. Krasovskii, E. V. Chulkov, H. Iwasawa, T. Okuda, K. Shimada, Y. Ueda, H. Namatame, and M. Taniguchi, Phys. Rev. Lett. 105, 076802 (2010);
19.J. G. Analytis, J. H. Chu, Y. L. Chen, F. Corredor, R. D. McDonald, Z. X. Shen, and I. R. Fisher, Phys. Rev. B 81, 205407 (2010).
20. T. Plechacek, J. Navratil, and J. Horak, J. Solid State Chem. 165, 35 (2002).
21. Y. S. Hor, A. Richardella, P. Roushan, Y. Xia, J. G. Checkelsky, A. Yazdani, M. Z. Hasan, N. P. Ong, and R. J. Cava, Phys. Rev. B 79, 195208 (2009).
22. N. P. Butch, K. Kirshenbaum, P. Syers, A. B. Sushkov, G. S. Jenkins, H. D. Drew, and J. Paglione, Phys. Rev. B 81, 241301R (2010).
23. K. Eto, Z. Ren, A. A. Taskin, K. Segawa, and Y. Ando, Phys. Rev. B 81, 195309 (2010).
24. Z. Ren, A. A. Taskin, S. Sasaki, K. Segawa, and Y. Ando, Phys. Rev. B 82, 241306R (2010).
25. J. L. Zhang, S. J. Zhang, H. M. Weng, W. Zhang, L. X. Yang, Q. Q. Liu, S. M. Feng, X. C. Wang, R. C. Yu, L. Z. Cao, L. Wang, W. G. Yang, H. Z. Liu, W. Y. Zhao, S. C. Zhang, X. Dai, Z. Fang, and C. Q. Jin, Proc. Natl. Acad. Sci. USA 108, 24 (2011);
25.Chao Zhang, Liling Sun, Zhaoyu Chen, Xingjiang Zhou, Qi Wu, Wei Yi, Jing Guo, Xiaoli Dong, and Zhongxian Zhao, Phys. Rev. B 83, 104504R (2011).
26. S. M. Young, S. Chowdhury, E. J. Walter, E. J. Mele, C. L. Kane, and A. M. Rappe, Phys. Rev. B 84, 085106 (2011).
27. J. J. Hamlin, J. R. Jeffries, N. P. Butch, P. Syers, D. A. Zocco, S. T. Weir, Y. K. Vohra, J. Paglione, and M. B. Maple, J. Phys. Condensed Matter 24, 035602 (2012).

Data & Media loading...


Article metrics loading...



Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of Bi2Se3 crystals by chemical vapor transport