Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. O. Aktas, Z. Fan, S. N. Mohammad, A. Botcharev, and H. Morkoc, Appl. Phys. Lett. 69, 25 (1996).
2. M. A. Khan, Q. Chen, M. S. Shur, B. T. McDermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Electron. Lett. 32, 357 (1996).
3. Y. F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. Denbaars, and V. K. Mishra, IEEE Electron Device Lett. 18, 290 (1997).
4. M. A. Khan, J. N. Kuznia, M. S. Shur, C. Eppens, J. Burm, and W. Shaff, Appl. Phys. Lett. 66, 1083 (1995).
5. S. J. Pearton, GaN and related materials Vol. II (Gordon and Breach, New York, 1999).
6. I. Adesida, J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, Properties, processing and applications of GaN and related semiconductors. EMIS Data Reviews No. 23 (INSPEC, London, 1999).
7. H. Cho, C. B. Vartuli, C. R. Abernathy, S. M. Donovan, S. J. Pearton, R. J. Shul, and J. Han, Solid State Electron. 42, 2455 (1998).
8. H. S. Kim, G. Y. Yeom, J. W. Lee, and T. I. Kim, Thin Solid Films, 341, 180 (1999).
9. W. V. Schoenfeld, C. H. Chen, P. M. Petroff, and E. L. Hu, Appl. Phys. Lett. 73, 2935 (1998).
10. P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993).
11. J. D. Guo, M. S. Feng, R. J. Guo, F. M. Pan, and C. Y. Chang, Appl. Phys. Lett. 67, 2657 (1995).
12. X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).
13. J. M. Lee, K. M. Chang, S. W. Kim, C. Huh, I. H. Lee, and S. J. Park, J. Appl. Phys. 87, 7667 (2000).
14. B. S. Yoo, S. J. Park, and K. H. Park, J. Vac. Sci. Technol. A 13, 931 (1995).
15. F. F. Chen and J. P. Chang, Lecture Notes on Principles of plasma processing, (Plenum/Kluwer, New York, 2002).
16. S. Chen, R. Kometani, K. Ishikawa, H. Kondo, K. Takeda, H. Kano, Y. Tokuda, M. Sekine, and M. Hori, 63rd Gaseous Electric Conference and 7th International Conference on Reactive Plasma, 2010, BT1-005.
17. S. Chen, Y. Nagae, M. Nakai, K. Ishikawa, H. Kondo, H. Kano, K. Takeda, T. Tokuda, M. Sekine, and M. Hori, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 2010, PA031A.
18. D. Buttari, A. Chini, M. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. Denbaars, and U. K. Mishra, IEEE Trans. Electron. Device Lett. 23, 76 (2002).
19. Y. Setsuhara, S. Miyake, Y. Sakawa, and T. Shoji, Jpn. J. Appl. Phys. 38, 4263 (1999).
20. S. Chen, H. Kondo, K. Ishikawa, K. Takeda, M. Sekine, H. Kano, S. Den, and M. Hori, Jpn. J. Appl. Phys. 50, 01AE03 (2011).
21. S. Takashima, M. Hori, T. Goto, A. Kono, M. Ito, and K. Yoneda, Appl. Phys. Lett. 75, 3929 (1999).
22. B. Chapman, Glow Discharge Processes: Sputtering and Plasma Etching (Wiley, New York, 1980).
23. C. G. Van de Walle, Phys. Rev. B 56, R10020 (1997).
24. T. Mattila, and R. M. Nieminen, Phys. Rev. B 55, 9571 (1997).
25. F. Ren, J. R. Lothian, S. J. Pearton, C. R. Abernathy, C. B. Vartuli, J. K. Mackenzie, R. G. Wilson, and R. F. Karlicek, J. Electron. Mater. 26, 1287 (1997).

Data & Media loading...


Article metrics loading...



The effect of in-situ exposure of n-GaN damaged by Cl2plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered to values close to those of as-grown samples after H radical exposure at a dose of 3.8 × 1017 cm−2. XPS revealed the appearance of a peak at a binding energy of 18.3 eV, which is tentatively assigned to Ga-H, and confirmed the removal of Cl after H radical exposure.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd