1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
oa
Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy
Rent:
Rent this article for
Access full text Article
/content/aip/journal/adva/2/4/10.1063/1.4768671
1.
1. Y. Chen, J. C. Hermanson, and G. J. Lapeyre, Phys. Rev. B 39, 12682 (1989).
http://dx.doi.org/10.1103/PhysRevB.39.12682
2.
2. T. van Gemmeren, S. Rossi Salmagne, and W. Mönch, Appl. Surf. Sci. 65/66, 625 (1993).
http://dx.doi.org/10.1016/0169-4332(93)90730-Y
3.
3. C. Nowak, J. Krujatz, A. Märkl, C. Meyne, A. Chassé, W. Braun, W. Richter, and D. R. T. Zahn, Surf. Sci. 331-333, Part A, 619 (1995).
http://dx.doi.org/10.1016/0039-6028(95)00329-0
4.
4. M. G. Betti, V. Corradini, G. Bertoni, P. Casarini, C. Mariani, and A. Abramo, Phys. Rev. B 63, 155315 (2001).
http://dx.doi.org/10.1103/PhysRevB.63.155315
5.
5. V. Y. Aristov, G. Le Lay, Le Thanh Vinh, K. Hricovini, and J. E. Bonnet, Phys. Rev. B 47, 2138 (1993).
http://dx.doi.org/10.1103/PhysRevB.47.2138
6.
6. V. Y. Aristov, G. Le Lay, V. M. Zhilin, G. Indlekofer, C. Grupp, A. Taleb-Ibrahimi, and P. Soukiassian, Phys. Rev. 60, 7752 (1999).
http://dx.doi.org/10.1103/PhysRevB.60.7752
7.
7. M. Morgenstern, J. Klijn, Chr. Meyer, M. Getzlaff, R. Adelung, R. A. Römer, K. Rossnagel, L. Kipp, M. Skibowski, and R. Wiesendanger, Phys. Rev. Lett. 89, 136806 (2002).
http://dx.doi.org/10.1103/PhysRevLett.89.136806
8.
8. M. Getzlaff, M. Morgenstern, Chr. Meyer, R. Brochier, R. L. Johnson, and R. Wiesendanger, Phys. Rev. B 63, 205305 (2001).
http://dx.doi.org/10.1103/PhysRevB.63.205305
9.
9. T. D. Veal and C. F. McConville, Phys. Rev. B 64, 085311 (2001).
http://dx.doi.org/10.1103/PhysRevB.64.085311
10.
10. C. B. Duke, S. L. Richardson, A. Paton, and A. Kahn, Surf. Sci. 127, L135 (1983).
http://dx.doi.org/10.1016/0039-6028(83)90412-0
11.
11. S. Y. Tong, W. N. Mei, and G. Xu, J. Vac. Sci. Technol. B 2, 393 (1984).
http://dx.doi.org/10.1116/1.582831
12.
12. L. Smit, T. E. Derry, and J. F. van der Veen, Surf. Sci. 150, 245 (1985).
http://dx.doi.org/10.1016/0039-6028(85)90221-3
13.
13. R. M. Feenstra, J. A. Stroscio, J. Tersoff, and A. P. Fein, Phys. Rev. Lett. 58, 1192 (1987).
http://dx.doi.org/10.1103/PhysRevLett.58.1192
14.
14. J. E. Gayone, R. G. Pregliasco, G. R. Gómez, E. A. Sánchez, and O. Grizzi, Phys. Rev. B 56, 4186 (1997).
http://dx.doi.org/10.1103/PhysRevB.56.4186
15.
15. C. Mailhiot, C. B. Duke, and D. J. Chadi, Surf. Sci. 149, 366 (1985).
http://dx.doi.org/10.1016/0039-6028(85)90069-X
16.
16. A. C. Ferraz and G. P. Srivastava, Surf. Sci. 182, 161 (1987).
http://dx.doi.org/10.1016/0039-6028(87)90094-X
17.
17. G.-X. Qian, R. M. Martin, and D. J. Chadi, Phys. Rev. B 37, 1303 (1988).
http://dx.doi.org/10.1103/PhysRevB.37.1303
18.
18. J. L. A. Alves, J. Hebenstreit, and M. Scheffler, Phys. Rev. B 44, 6188 (1991).
http://dx.doi.org/10.1103/PhysRevB.44.6188
19.
19. H. S. Karlsson, R. Viselga, and U. O. Karlsson, Surf. Sci. 402-404, 590 (1998).
http://dx.doi.org/10.1016/S0039-6028(98)00002-8
20.
20. F. Bartels, L. Surkamp, H. J. Clemens, and W. Mönch, J. Vac. Sci. Technol. B 1, 756 (1983).
http://dx.doi.org/10.1116/1.582687
21.
21. C. Astaldi, L. Sorba, C. Rinaldi, R. Mercuri, S. Nannarone, and C. Calandra, Surf. Sci. 162, 39 (1985).
http://dx.doi.org/10.1016/0039-6028(85)90873-8
22.
22. O. M’Hamedi, F. Proix, and C. Sébenne, Semicond. Sci. Technol. 2, 418 (1987).
http://dx.doi.org/10.1088/0268-1242/2/7/005
23.
23. T. U. Kampen, L. Koenders, K. Smit, M. Rückschloss, and W. Mönch, Surf. Sci. 242, 314 (1991).
http://dx.doi.org/10.1016/0039-6028(91)90285-Z
24.
24. A. Ruocco, S. Nannarone, M. Sauvage-Simkin, N. Jedrecy, R. Pinchaux, and A. Waldhauer, Surf. Sci. 307-309, Part B, 662 (1994).
http://dx.doi.org/10.1016/0039-6028(94)91473-7
25.
25. A. Ruocco, M. Biagini, A. di Bona, N. Gambacorti, S. Valeri, S. Nannarone, A. Santoni, and J. Bonnet, Phys. Rev. B 51, 2399 (1995).
http://dx.doi.org/10.1103/PhysRevB.51.2399
26.
26. J. E. Gayone, R. G. Pregliasco, E. A. Sánchez, and O. Grizzi, Phys. Rev. B 56, 4194 (1997).
http://dx.doi.org/10.1103/PhysRevB.56.4194
27.
27. F. Manghi, C. M. Bertoni, C. Calandra, and E. Molinari, J. Vac. Sci. Technol. 21, 371 (1982).
http://dx.doi.org/10.1116/1.571783
28.
28. P. Jiang, Z. Yang, and F. Chen, Acta Phys. Sin. 4, 985 (1984).
29.
29. C. M. Bertoni, M. Buongiorno Nardelli, F. Bernardini, F. Finocchi, and E. Molinari, Europhys. Lett. 13, 653 (1990).
http://dx.doi.org/10.1209/0295-5075/13/7/014
30.
30. A. F. Wright, C. Y. Fong, and I. P. Batra, Surf. Sci. 244, 51 (1991).
http://dx.doi.org/10.1016/0039-6028(91)90168-R
31.
31. R. Di Felice, A. I. Shkrebtii, F. Finocchi, C. M. Bertoni, and G. Onida, J. Electron Spectrosc. Relat. Phonom. 64/65, 697 (1993).
http://dx.doi.org/10.1016/0368-2048(93)80139-D
32.
32. J. Fritsch, A. Eckert, P. Pavone, and U. Schröder, J. Phys.: Condens. Matter 7, 7717 (1995).
http://dx.doi.org/10.1088/0953-8984/7/40/004
33.
33. L. Ö. Olsson, C. B. M. Andersson, M. C. Håkansson, J. Kanski, L. Ilver, and U. O. Karlsson, Phys. Rev. Lett. 76, 3626 (1996).
http://dx.doi.org/10.1103/PhysRevLett.76.3626
34.
34. S. Abe, T. Inaoka, and M. Hasegawa, Phys. Rev. B 66, 205309 (2002).
http://dx.doi.org/10.1103/PhysRevB.66.205309
35.
35. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
http://dx.doi.org/10.1016/0022-3697(57)90013-6
36.
36. M. Noguchi, K. Hirakawa, and T. Ikoma, Phys. Rev. Lett. 66, 2243 (1991).
http://dx.doi.org/10.1103/PhysRevLett.66.2243
37.
37. G. R. Bell, C. F. McConville, and T. S. Jones, Phys. Rev. B 54, 2654 (1996).
http://dx.doi.org/10.1103/PhysRevB.54.2654
38.
38. K. Hashimoto, C. Sohrmann, J. Wiebe, T. Inaoka, F. Meier, Y. Hirayama, R. A. Römer, R. Wiesendanger, and M. Morgenstern, Phys. Rev. Lett. 101, 256802 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.256802
39.
39. M. Minowa, R. Masutomi, T. Mochizuki, and T. Okamoto, Phys. Rev. B 77, 233301 (2008).
http://dx.doi.org/10.1103/PhysRevB.77.233301
40.
40. T. Mochizuki,, R. Masutomi, and T. Okamoto, Phys. Rev. Lett. 101, 267204 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.267204
41.
41. L. Colakerol, T. D. Veal, H.-K. Jeong, L. Plucinski, A. DeMasi, T. Learmonth, P.-A. Glans, S. Wang, Y. Zhang, L. F. J. Piper, P. H. Jefferson, A. Fedorov, T.-C. Chen, T. D. Moustakas, C. F. McConville, and K. E. Smith, Phys. Rev. Lett. 97, 237601 (2006).
http://dx.doi.org/10.1103/PhysRevLett.97.237601
42.
42. P. D. C. King, T. D. Veal, D. J. Payne, A. Bourlange, R. G. Egdell, and C. F. McConville, Phys. Rev. Lett. 101, 116808 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.116808
43.
43. P. D. C. King, T. D. Veal, and C. F. McConville, Phys. Rev. B 77, 125305 (2008).
http://dx.doi.org/10.1103/PhysRevB.77.125305
44.
44. J. M. Ziman, Pinciples of the Theory of Solids (Cambridge University Press, Cambridge, 1972) chap. 6, secs. 6.3 and 6.4.
45.
45. R. G. Dandrea, N. W. Ashcroft, and A. E. Carlsson, Phys. Rev. B 34, 2097 (1986).
http://dx.doi.org/10.1103/PhysRevB.34.2097
46.
46. M. Hass and B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
http://dx.doi.org/10.1016/0022-3697(62)90127-0
47.
47. F. Lukes, Phys. Status Solidi b 84, K113 (1977).
http://dx.doi.org/10.1002/pssb.2220840257
48.
48. C. R. Pidgeon, S. H. Groves, and J. Feinleib, Solid State Commun. 5, 677 (1967).
http://dx.doi.org/10.1016/0038-1098(67)90091-9
49.
49. J. Takayama, K. Shimomae, and C. Hamaguchi, Jpn. J. Appl. Phys. 20, 1265 (1981).
http://dx.doi.org/10.1143/JJAP.20.1265
50.
50. A. V. Varfolomeev, R. P. Seisyan, and R. N. Yakimova, Sov. Phys. Semicond. (English transl.) 9, 530 (1975);
50.A. V. Varfolomeev, R. P. Seisyan, and R. N. Yakimova, Fiz. Tekh. Poluprovodn. 9, 804 (1975).
51.
51. Y. Chen, S. Nannarone, J. Schaefer, J. C. Hermanson, and G. J. Lapeyre, Phys. Rev. B 39, 7653 (1989).
http://dx.doi.org/10.1103/PhysRevB.39.7653
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/4/10.1063/1.4768671
Loading
/content/aip/journal/adva/2/4/10.1063/1.4768671
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/2/4/10.1063/1.4768671
2012-11-20
2014-09-23

Abstract

Adsorption on an n-type InAssurface often induces a gradual formation of a carrier-accumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP) dispersion of the conduction band into the local-density-functional (LDF) formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process. Accurate evaluation of the NP subband dispersion at each formation stage is indispensable in making a quantitative analysis of collective electronic excitations and transport properties in the subbands.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/2/4/1.4768671.html;jsessionid=xbaguxur7xvu.x-aip-live-03?itemId=/content/aip/journal/adva/2/4/10.1063/1.4768671&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/4/10.1063/1.4768671
10.1063/1.4768671
SEARCH_EXPAND_ITEM