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High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy
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Image of FIG. 1.

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FIG. 1.

θ–2θ scan XRD pattern of NiO film grown at 500 °C.

Image of FIG. 2.

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FIG. 2.

FWHM of the (111) diffraction peak in the X-ray rocking curve of the grown NiO films as a function of growth temperature. Inset is the X-ray rocking curve of the NiO film grown at 550 °C.

Image of FIG. 3.

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FIG. 3.

Φ scan XRD pattern for the (200) planes of the NiO film grown at 550 °C, which were inclined at 54.73° from the (111) planes, with 2θ of 43.28°.

Image of FIG. 4.

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FIG. 4.

(a) Bright-field TEM image and SAD pattern of the NiO film grown at 550 °C (300 kV accelerating voltage). The area of the SAD pattern is circled on the TEM image (280 nm diameter). (b) Bright-field TEM image and FFT patterns of another local area.

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/content/aip/journal/adva/2/4/10.1063/1.4769082
2012-11-26
2014-04-19

Abstract

High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO filmsgrown at different temperatures indicates a minimum full width at half maximum of the cubic (111) diffraction peak of 0.107° for NiO filmgrown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

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Scitation: High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/adva/2/4/10.1063/1.4769082
10.1063/1.4769082
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