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Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
8. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nature Mater. 9, 721 (2010).
10. D. C. Worledge, G. Hu, David W. Abraham, J. Z. Sun, P. L. Trouilloud, J. Nowak, S. Brown, M. C. Gaidis, E. J. O’Sullivan, and R. P. Robertazzi, Appl. Phys. Lett. 98, 022501 (2011).
16. J.-H. Park, Y. Kim, W. C. Lim, J. H. Kim, S. H. Park, J. H. Kim, W. Kim, K. W. Kim, J. H. Jeong, K. S. Kim, H. Kim, Y. J. Lee, S. C. Oh, J. E. Lee, S. O. Park, S. Watts, D. Apalkov, V. Nikitin, M. Krounbi, S. Jeong, S. Choi, H. K. Kang, and C. Chung, Symposium on VLSI Technology Digest of Technical Papers (IEEE) 57 (2012).
19. B. D. Cullity, Introduction to Magnetic Materials (Addison-Wesley, Reading, MA, 1972).
21. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 93, 082508 (2008).
25. K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 95, 232516 (2009).
28. Y. Lu, B. Lépine, G. Jézéquel, S. Ababou, M. Alnot, J. Lambert, A. Renard, M. Mullet, C. Deranlot, H. Jaffrès, F. Petroff, and J.-M. George, J. Appl. Phys. 108, 043703 (2010).
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We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB) free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB-MgO system with perpendicular magnetic anisotropy (PMA). It is found that the critical thickness (t c ) to sustain PMA is doubled (t c = 2.6 nm) in Ta-inserted CoFeB FL as compared to single CoFeB layer (t c = 1.3 nm). While the effective magnetic anisotropy is found to increase with Ta insertion, the saturation magnetization showed a slight reduction. As the CoFeB thickness increasing, the thermal stability of Ta inserted structure is significantly increased by a factor of 2.5 for total CoFeB thickness less than 2 nm. We have observed a reasonable value of TMR for a much thicker CoFeB FL (thickness = 2-2.6 nm) with Ta insertion, and without significant increment in resistance-area product. Our results reveal that an ultra-thin Ta insertion in CoFeB might pay the way towards developing the high-density memory devices with enhanced thermal stability.
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