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/content/aip/journal/adva/3/1/10.1063/1.4789399
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/content/aip/journal/adva/3/1/10.1063/1.4789399
2013-01-16
2016-09-25

Abstract

BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001), it is found that, strains from the LAO substrate may be the only reason that induces the T-like phase at higher temperatures. At lower temperatures, the island growth induced strains alone can also generate T-like phase on STO substrate.

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