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Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness
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RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al2O3 film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10−12 to 2.54 × 10−8 A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, the HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm2/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 107 and V th shift of 3.6 V under V GS = 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al2O3 as gate insulator.
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