Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/3/11/10.1063/1.4834155
1.
1. B. Ryningen, G. Stokkan, M. Kivambe, T. Ervik, and O. Lohne, Acta Materialia 59, 7703 (2011).
http://dx.doi.org/10.1016/j.actamat.2011.09.002
2.
2. D. MacDonald, A. Cuevas, A. Kinomura, Y. Nakano, and L. J. Geerligs, Journal of Applied Physics 97, 033523 (2005).
http://dx.doi.org/10.1063/1.1845584
3.
3. S. Rein, Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications (Springer-Verlag, 2005).
4.
4. T. Trupke, B. Mitchell, J. W. Weber, W. McMillan, R. A. Bardos, and R. Kroeze, Energy Procedia 15, 135146 (2012).
http://dx.doi.org/10.1016/j.egypro.2012.02.016
5.
5. N. A. Drozdow, A. A. Patrin, and V. D. Tkachev, Pis'ma Zh. Exsp. Teor. Fiz 23, 597 (1976).
6.
6. R. Sauer, J. Weber, J. Stolz, E. R. Weber, K. Küsters, and H. Alexander, Appied Physics A Solids and Surfaces (1984).
7.
7. V. Higgs, M. Goulding, A. Brinklow, and P. Kightley, Appl. Phys. Lett. 60, 1369 (1992).
http://dx.doi.org/10.1063/1.107293
8.
8. S. Ostapenko, I. Tarasov, J. P. Kalejs, C. Haessler, and E.-U. Reisner, Semiconductor Science and Technology 15, 840 (2000).
http://dx.doi.org/10.1088/0268-1242/15/8/310
9.
9. T. Sekiguchi and K. Sumino, Journal of Applied Physics 79, 3253 (1996).
http://dx.doi.org/10.1063/1.361271
10.
10. S. Pizzini, M. Guzzi, E. Grilli, and G. Borionetti, Journal of Physics: Condensed Matter 12, 10131 (2000).
http://dx.doi.org/10.1088/0953-8984/12/49/312
11.
11. M. Tajima, Y. Iwata, F. Okayama, H. Toyota, H. Onodera, and T. Sekiguchi, Journal of Applied Physics 111, 113523 (2012).
http://dx.doi.org/10.1063/1.4728194
12.
12. T. Arguirov, “Electro-optical properties of dislocations in silicon and their possible application for light emitters,” Ph.D. thesis, der Brandenburgischen Technischen Universität Cottbus, Cottbus, Germany (2007).
13.
13. T. Mchedlidze, T. Arguirov, O. Kononchuk, M. Trushin, and M. Kittler, Phys. Status Solidi 8, 991 (2011).
http://dx.doi.org/10.1002/pssc.201000367
14.
14. A. V. Mudryi, F. P. Korshunov, A. I. Patuk, I. A. Shakin, T. P. Larionova, A. G. Ulyashin, R. Job, W. R. Fahrner, V. V. Emtsev, V. Yu. Davydov, and G. Oganesyan, Physica B: Condensed Matter 308-310, 181 (2001).
http://dx.doi.org/10.1016/S0921-4526(01)00687-1
15.
15. D. Mankovics, R. Schmid, T. Arguirov, and M. Kittler, Cryst. Res. Technol. 47, 1148 (2012).
http://dx.doi.org/10.1002/crat.201200146
16.
16. R. P. Schmid, D. Mankovics, T. Arguirov, M. Ratzke, T. Mchedlidze, and M. Kittler, Physica Status Solidi (A) 208, 888 (2011).
http://dx.doi.org/10.1002/pssa.201026269
17.
17. M. P. Peloso, J. S. Lew, B. Hoex, and A. G. Aberle, Energy Procedia 15, 171 (2012).
http://dx.doi.org/10.1016/j.egypro.2012.02.020
18.
18. E. Olsen, and A. Flø, Appl. Phys. Lett. 99 (2011).
http://dx.doi.org/10.1063/1.3607307
19.
19. I. Burud, A. Flø, and E. Olsen, AIP 2 (2012).
20.
20. J. Burger, “Hyperspectral NIR Image Analysis,” Ph.D. thesis, pub.epsilon.slu.se, Umeå, Sweden (2006).
21.
21. Piqueras, A selection of papers presented at the 12th International Conference on Chemometrics in Analytical Chemistry 705, 182 (2011).
22.
22. K. Weronek, J. Weber, and R. Buchner, in Polycrystalline Semiconductors II (1991) pp. 5055.
23.
23. S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, and A. Cavallini, Journal of Applied Physics 92, 2437 (2002).
http://dx.doi.org/10.1063/1.1497450
24.
24. P. L. Bradfield and T. G. Brown, Physical Review B 38, 3533 (1988).
http://dx.doi.org/10.1103/PhysRevB.38.3533
25.
25. T. G. Brown, Appl. Phys. Lett. 49, 245247 (1986).
http://dx.doi.org/10.1063/1.97183
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/11/10.1063/1.4834155
Loading
/content/aip/journal/adva/3/11/10.1063/1.4834155
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/3/11/10.1063/1.4834155
2013-11-20
2016-12-06

Abstract

Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/3/11/1.4834155.html;jsessionid=0JOdHC-1wEU8wMtpZniW32OG.x-aip-live-06?itemId=/content/aip/journal/adva/3/11/10.1063/1.4834155&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/3/11/10.1063/1.4834155&pageURL=http://scitation.aip.org/content/aip/journal/adva/3/11/10.1063/1.4834155'
Right1,Right2,Right3,