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/content/aip/journal/adva/3/12/10.1063/1.4860949
1.
1. S. L. Rumyantsev, M. E. Levinshtein, A. D. Jackson, S. N. Mohammmad, G. L. Harris, M. G. Spencer, and M. S. Shur, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (John Wiley & Sons, Inc., New York, 2001), p. 6792.
2.
2. Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, Science 317, 932 (2007).
http://dx.doi.org/10.1126/science.1144216
3.
3. J. Li, R. Dahal, S. Majety, J. Y. Lin, and H. X. Jiang, Nuclear Instruments and Methods in Physics Research A 654, 417 (2011).
http://dx.doi.org/10.1016/j.nima.2011.07.040
4.
4. K. Watanabe, T. Taniguchi, and H. Kanda, Nature Photonics 3, 591 (2009).
http://dx.doi.org/10.1038/nphoton.2009.167
5.
5. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335, 947 (2012).
http://dx.doi.org/10.1126/science.1218461
6.
6. C. Dean, A. F. Young, L. Wang, I. Meric, G.-H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim, and J. Hone, Solid State Communications 152, 1275 (2012).
http://dx.doi.org/10.1016/j.ssc.2012.04.021
7.
7. A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
http://dx.doi.org/10.1038/nature12385
8.
8. R. Dahal, J. Li, S. Majety, B. N. Pantha, X. K. Cao, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 98, 211110 (2011).
http://dx.doi.org/10.1063/1.3593958
9.
9. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 100, 061121 (2012).
http://dx.doi.org/10.1063/1.3682523
10.
10. B. Huang, X. K. Cao, H. X. Jiang, J. Y. Lin, and S. H. Wei, Phys. Rev. B 86, 155202 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.155202
11.
11. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 100, 061121 (2012).
http://dx.doi.org/10.1063/1.3682523
12.
12. F. Oba, A. Togo, I. Tanaka, K. Watanabe, and T. Taniguchi, Phys. Rev. B 81, 075125 (2010).
http://dx.doi.org/10.1103/PhysRevB.81.075125
13.
13. R. H. Wentorf, Jr., J. Chem. Phys. 36, 1990 (1962).
http://dx.doi.org/10.1063/1.1732816
14.
14. O. Mishima, J. Tanaka, S. Yamaoka, and O. Fukunaga, Science 238, 181 (1987).
http://dx.doi.org/10.1126/science.238.4824.181
15.
15. T. Taniguchi, K. Watanabe, S. Koizumi, I. Sakaguchi, T. Sekiguchi, and S. Yamaoka, Appl. Phys. Lett. 81, 4145 (2002).
http://dx.doi.org/10.1063/1.1524295
16.
16. T. Sugino, K. Tanioka, S. Kawasaki, and J. Shirafuji, Jpn. Appl. Phys. 36, L463 (1997).
http://dx.doi.org/10.1143/JJAP.36.L463
17.
17. J. Ying, X. W. Zhang, Z. G. Yin, H. R. Tan, S. G. Zhang, and Y. M. Fan, J. Appl. Phys. 109, 023716 (2011).
http://dx.doi.org/10.1063/1.3544065
18.
18. S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, New York, 2000).
19.
19. Y. Kobayashi, T. Akasaka, and T. Makimoto, J. Cryst. Growth 310, 5048 (2008).
http://dx.doi.org/10.1016/j.jcrysgro.2008.07.057
20.
20. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
http://dx.doi.org/10.1063/1.371145
21.
21. L. J. Van der Pauw, Philips Research Reports 13, 1 (1958).
22.
22. O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008).
http://dx.doi.org/10.1063/1.3052930
23.
23. A. Kumar, J. Pernot, F. Omnès, P. Muret, A. Traoré, L. Magaud, A. Deneuville, N. Habka, J. Barjon, F. Jomard, M. A. Pinault, J. Chevallier, C. Mer-Calfati, J. C. Arnault, and P. Bergonzo, J. Appl. Phys. 110, 033718 (2011).
http://dx.doi.org/10.1063/1.3611035
24.
24. M. S. Si and D. S. Xue, Europhys. Lett. 76, 664 (2006).
http://dx.doi.org/10.1209/epl/i2006-10314-3
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/content/aip/journal/adva/3/12/10.1063/1.4860949
2013-12-30
2016-12-04

Abstract

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm2/V·s and concentration of n ∼ 1 × 1016 cm−3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

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