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Electrical transport properties of Si-doped hexagonal boron nitride epilayers
1. S. L. Rumyantsev, M. E. Levinshtein, A. D. Jackson, S. N. Mohammmad, G. L. Harris, M. G. Spencer, and M. S. Shur, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (John Wiley & Sons, Inc., New York, 2001), p. 67–92.
5. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335, 947 (2012).
6. C. Dean, A. F. Young, L. Wang, I. Meric, G.-H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim, and J. Hone, Solid State Communications 152, 1275 (2012).
18. S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, New York, 2000).
21. L. J. Van der Pauw, Philips Research Reports 13, 1 (1958).
23. A. Kumar, J. Pernot, F. Omnès, P. Muret, A. Traoré, L. Magaud, A. Deneuville, N. Habka, J. Barjon, F. Jomard, M. A. Pinault, J. Chevallier, C. Mer-Calfati, J. C. Arnault, and P. Bergonzo, J. Appl. Phys. 110, 033718 (2011).
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The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm2/V·s and concentration of n ∼ 1 × 1016 cm−3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.
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