Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. S. L. Rumyantsev, M. E. Levinshtein, A. D. Jackson, S. N. Mohammmad, G. L. Harris, M. G. Spencer, and M. S. Shur, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (John Wiley & Sons, Inc., New York, 2001), p. 6792.
2. Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, Science 317, 932 (2007).
3. J. Li, R. Dahal, S. Majety, J. Y. Lin, and H. X. Jiang, Nuclear Instruments and Methods in Physics Research A 654, 417 (2011).
4. K. Watanabe, T. Taniguchi, and H. Kanda, Nature Photonics 3, 591 (2009).
5. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335, 947 (2012).
6. C. Dean, A. F. Young, L. Wang, I. Meric, G.-H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim, and J. Hone, Solid State Communications 152, 1275 (2012).
7. A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
8. R. Dahal, J. Li, S. Majety, B. N. Pantha, X. K. Cao, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 98, 211110 (2011).
9. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 100, 061121 (2012).
10. B. Huang, X. K. Cao, H. X. Jiang, J. Y. Lin, and S. H. Wei, Phys. Rev. B 86, 155202 (2012).
11. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 100, 061121 (2012).
12. F. Oba, A. Togo, I. Tanaka, K. Watanabe, and T. Taniguchi, Phys. Rev. B 81, 075125 (2010).
13. R. H. Wentorf, Jr., J. Chem. Phys. 36, 1990 (1962).
14. O. Mishima, J. Tanaka, S. Yamaoka, and O. Fukunaga, Science 238, 181 (1987).
15. T. Taniguchi, K. Watanabe, S. Koizumi, I. Sakaguchi, T. Sekiguchi, and S. Yamaoka, Appl. Phys. Lett. 81, 4145 (2002).
16. T. Sugino, K. Tanioka, S. Kawasaki, and J. Shirafuji, Jpn. Appl. Phys. 36, L463 (1997).
17. J. Ying, X. W. Zhang, Z. G. Yin, H. R. Tan, S. G. Zhang, and Y. M. Fan, J. Appl. Phys. 109, 023716 (2011).
18. S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, New York, 2000).
19. Y. Kobayashi, T. Akasaka, and T. Makimoto, J. Cryst. Growth 310, 5048 (2008).
20. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
21. L. J. Van der Pauw, Philips Research Reports 13, 1 (1958).
22. O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008).
23. A. Kumar, J. Pernot, F. Omnès, P. Muret, A. Traoré, L. Magaud, A. Deneuville, N. Habka, J. Barjon, F. Jomard, M. A. Pinault, J. Chevallier, C. Mer-Calfati, J. C. Arnault, and P. Bergonzo, J. Appl. Phys. 110, 033718 (2011).
24. M. S. Si and D. S. Xue, Europhys. Lett. 76, 664 (2006).

Data & Media loading...


Article metrics loading...



The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm2/V·s and concentration of n ∼ 1 × 1016 cm−3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd