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/content/aip/journal/adva/3/12/10.1063/1.4860950
2013-12-30
2016-09-29

Abstract

The Ce and Mn co-doped BiFeO (BCFMO) thin films were synthesized on Pt/Ti/SiO/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large / ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.

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