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1. M. Villafuerte, S. P. Heluani, G. Juárez, G. Simonelli, and G. Braunstein, Appl. Phys. Lett. 90, 052105 (2007).
2. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and Z. Fei, Nano lett. 9, 1636 (2009).
3. J. S. Choi, J. S. Kim, I. R. Hwang, S. H. Hong, and S. H. Jeon, Appl. Phys. Lett. 95, 022109 (2009).
4. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008).
5. W. H. Guan, S. B. Long, R. Jia, and M. Liu, Appl. Phys. Lett. 91, 062111 (2007).
6. Q. Liu, W. H. Guan, S. B. Long, R. Jia, and M. Liu, Appl. Phys. Lett. 92, 012117 (2008).
7. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004).
8. C. Y. Lin, C. Y. Wu, C. Y. Wu, T. C. Lee, F. L. Yang, C. M. Hu, and T. Y. Tseng, IEEE Electron Device Lett. 26, 351 (2007).
9. C. Y. Liu, P. H. Wu, A. Wang, W. Y. Jang, J. C. Young, K. Y. Chiu, and T. Y. Tseng, IEEE Electron Device Lett. 28, 366 (2005).
10. C. Y. Liu, C. C. Chuang, J. S. Chen, A. Wang, W. Y. Jang, J. C. Young, K. Y. Chiu, and T. Y. Tseng, Thin Solid Films 494, 287 (2006).
11. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nat. Mater. 5, 312 (2006).
12. J. J. Yang, J. P. Strachan, Q. F. Xia, D-A. A. Ohlberg, P. J. Kuekes, R. D. Kelley, W. F. Stickle, D. R. Stewart, G. Medeiros-Ribeiro, and R. S. Williams, Adv. Mater. 22, 4034 (2010).
13. M. H. Tang, Z. P. Wang, J. C. Li, Z. Q. Zeng, X. L. Xu, G. Y. Wang, L. B. Zhang, Y. G. Xiao, S. B. Yang, B. Jiang, and J. He, Semicond. Sci. Technol. 26, 075019 (2011).
14. H. Kim, C. Park, S. Lee, and D. W. Kim, J. Phys. D: Appl. Phys. 42, 055306 (2009).
15. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
16. R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, and R. Dittmann, Appl. Phys. Lett. 88, 042901 (2006).
17. R. Ramesh and N. A. Spaldin, Nat. Mater. 6, 21 (2007).
18. J. V. Rivera and H. Schmid, Ferroelectrics 204, 23 (1997).
19. J. G. Wu and J. Wang, J. Appl. Phys. 108, 004107 (2010).
20. D. Lee, M. G. Kim, S. Ryu, H. M. Jang, and S. G. Lee, Appl. Phys. Lett. 86, 222903 (2005).
21. F. Huang, X. Lu, W. Lin, X. Wu, Y. Kan, and J. Zhu, Appl. Phys. Lett. 89, 242914 (2006).
22. M. Li, F. Zhuge, X. J. Zhu, K. Yin, J. Wang, Y. Liu, C. He, B. Chen, and R. W. Li, Nanotechnology 21, 425202 (2010).
23. X. Zhu, F. Zhuge, M. Li, K. Yin, Y. Liu, Z. Zuo, B. Chen, and R. W. Li, J. Phys. D: Appl. Phys. 44, 415104 (2011).
24. J. M. Luo, S. P. Lin, Y. Zheng, and B. Wang, Appl. Phys. Lett. 101, 062902 (2012).
25. G. D. Hu, S. H. Fan, C. H. Yang, and W. B. Wu, Appl. Phys. Lett. 92, 192905 (2008).
26. Z. Quan, W. Liu, H. Hu, S. Xu, B. Sebo, G. Fang, M. Li, and X. Zhao, J. Appl. Phys. 104, 084106 (2008).
27. S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006).
28. S. K. Singh, H. Ishiwara, K. Sato, and K. Maruyama, J. Appl. Phys. 102, 094109 (2007).
29. J. Liu, M. Y. Li, L. Pei, B. F. Yu, D. Y. Guo, and X. Z. Zhao, J. Phys. D: Appl. Phys. 42, 115409 (2009).
30. M. K. Singh, H. M. Jang, S. Ryu, and M. H. Jo, Appl. Phys. Lett. 88, 042907 (2006).
31. D. Kothari, V. R. Reddy, V. G. Sathe, A. Gupta, A. Banerjee, and A. M. Awasthi, J. Magn. Magn. Mater. 320, 548 (2008).
32. I. Szafraniak, M. Polomska, B. Hilczer, A. Pietraszko, and L. Kepiński, J. Eur. Ceram. Soc. 27, 4399 (2007).
33. J. M. Wesselinowa and S. Kovachev, Phys. Rev. B 75, 045411 (2007).
34. M. K. Jeon, Y. I. Kim, S. H. Nahm, and S. I. Woo, J. Phys. D: Appl. Phys. 39, 5080 (2006).
35. K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, Nanotechnology 22, 254010 (2011).
36. S. T. Chang and J. Y. Lee, Appl. Phys. Lett. 80, 655 (2002).
37. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater. 19, 2232 (2007).
38. S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D. W. Kim, and C. U. Jung, Appl. Phys. Lett. 92, 183507 (2008).
39. M. H. Tang, B. Jiang, Y. G. Xiao, Z. Q. Zeng, Z. P. Wang, J. C. Li, and J. He, Microelectronic Engineering 93, 35 (2012).
40. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
41. D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and C. S. Hwang, Rep. Prog. Phys. 75, 076502 (2012).
42. S. W. Chen and J. M. Wu, Thin Solid Films 519, 499 (2010).
43. A. Sawa, Mater. Today 11, 28 (2008).

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The Ce and Mn co-doped BiFeO (BCFMO) thin films were synthesized on Pt/Ti/SiO/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large / ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.


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