No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2
14. J. Shin, J. Park, J. Lee, S. Park, S. Kim, W. Lee, I. Kim, D. Lee, and H. Hwang, IEEE Electron Device Lett. 32, 958 (2011).
19. T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, and M. Aono (in preparation).
21. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono, and R. Waser, Nat. Mater. 11, 530 (2012).
22. E. Budevski, G. Staikov, and W. J. Lorenz, Electrochemical Phase Formation and Growth (VCH, Wheinhein, 1996).
24. R. Soni, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, IEEE Trans. Electron Devices 56, 1040 (2009).
25. J. J. O’Dwyer, The Theory of Electronic Conduction and Breakdown in Solid Dielectrics (Oxford, Clarendon, 1973).
Article metrics loading...
The speed of the SET operation of a Cu/Ta2O5/Pt atomic switch from a high-resistance state to a low-resistance state was measured by transient current measurements under the application of a short voltage pulse. The SET time decreased exponentially with increasing pulse amplitude, reaching as low as 1 ns using moderate pulse voltages. This observation shows that oxide-based atomic switches hold potential for fast-switching memory applications. From a comparison with atomistic nucleation theory, Cu nucleation on the Pt electrode was found to be the likely rate-limiting process determining the SET time.
Full text loading...
Most read this month