1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
oa
UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition
Rent:
Rent this article for
Access full text Article
/content/aip/journal/adva/3/3/10.1063/1.4795737
1.
1. S. Tüzemen, E. Gür, Yıldırım, T. , G. Xiong, and R. T. Williams, J. Appl. Phys. 100, 103513 (2006).
http://dx.doi.org/10.1063/1.2386926
2.
2. Gür, E. , Coskun, C. , and Tüzemen, S. , J. Phys. D: Appl. Phys 41, 105301 (2008).
http://dx.doi.org/10.1088/0022-3727/41/10/105301
3.
3. Lyu, S. C. , Zhang, Y. , Ruh, H. , Lee, H. J. , Shim, H. W. , Suh, E. K. , and Lee, C. , J. Chem. Phys. Lett. 363, 134138 (2002).
http://dx.doi.org/10.1016/S0009-2614(02)01145-4
4.
4. Huang, J. , Wang, L. , Xu, R. , Tang, K. , Shi, W. , and Xia, Y. , Semicond. Sci. Tech. 24, 075025 (2009) (5pp).
http://dx.doi.org/10.1088/0268-1242/24/7/075025
5.
5. People, R. , Phys. Rev. B. 32, 14051408 (1985).
http://dx.doi.org/10.1103/PhysRevB.32.1405
6.
6. Koide, Y. , Appl. Surf. Sci. 254, 62686272 (2008).
http://dx.doi.org/10.1016/j.apsusc.2008.02.157
7.
7. Caputo, D. , de Cesare, D. , Nascett, A. , and Tucci, M. , Sensor Actuat. A Phys. 153, 14 (2009).
http://dx.doi.org/10.1016/j.sna.2009.04.017
8.
8. Gramsch, E. , Pchelyakov, O. P. , Chistokhin, I. B. , and Thishkovsky, G. , IEE T. Electron Dev. 54, 26382643 (2007).
http://dx.doi.org/10.1109/TED.2007.904829
9.
9. Jin, Y. , Wang, J. , Sun, B. , Blakesley, J. C. , and Greenham, N. C. , Nano Lett. 8, 16491653 (2008).
http://dx.doi.org/10.1021/nl0803702
10.
10. Zhai, T. , Fang, X. , Liao, M. , Xu, X. , Liang, Li. , Liu, B. , Koide, Y. , Ma, Y. , Yao, J. , Bando, Y. , and Golberg, D. , Acs Nano. 4, 15961602 (2010).
http://dx.doi.org/10.1021/nn9012466
11.
11. Leung, Y. H. , He, Z. B. , Luo, L. B. , Tsang, C. H. A. , Wong, N. B. , Zhang, W. J. , and Lee, S. T. , Appl. Phys. Lett. 96, 053102 (2010).
http://dx.doi.org/10.1063/1.3299269
12.
12. Liang, S. , Sheng, H. , Liua, Y. , Huo, Z. , Lu, Y. , and Shen, H. , J. Cryst. Growth 225, 110113 (2001).
http://dx.doi.org/10.1016/S0022-0248(01)00830-2
13.
13. Casalino, M. , Sirleto, L. , Iodice, M. , Saffioti, N. , Gioffre, M. , Rendina, I. , and Coppola, G. , Appl. Phys. Let. 96, 241112 (2010).
http://dx.doi.org/10.1063/1.3455339
14.
14. De-Gang, Z. , Shuang, Z. , Wen-Bao, L. , Xiao-Peng, H. , De-Sheng, J. , Jian-Jun, Z. , Zong-Shun, L. , Hui, W. , Shu-Ming, Z. , Hui, Y. , and Long, W. , Chin. Phys. B 19, 057802 (2010).
http://dx.doi.org/10.1088/1674-1056/19/5/057802
15.
15. Dwivedi, A. D. D. , Singh, A. K. , Prakash, R. , and Chakrabarti, P. , Curr. Appl. Phys. 10, 900903 (2010).
http://dx.doi.org/10.1016/j.cap.2009.10.019
16.
16. Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, Appl. Phys. Lett. 90, 131115 (2007).
http://dx.doi.org/10.1063/1.2718516
17.
17. Baltakesmez, A. , Tekmen, S. , and Tüzemen, S. , J. Appl. Phys. 110, 054502 (2011).
http://dx.doi.org/10.1063/1.3627247
18.
18. Tseng, C. C. , Chung, T. H. , Mai, S. C. , Chao, K. P. , Lin, W. H. , Lin, S. Y. , and Wu, M. C. , J. Vac. Sci. Technol. B. 28, C3G28C3G31 (2010).
19.
19. Yadav, H. K. , Sreenivas, K. , and Gupta, V. , Appl. Phys. Lett. 96, 223507 (2010).
http://dx.doi.org/10.1063/1.3427417
20.
20. Yang, H. Y. , Son, D. I. , Kim, T. W. , Lee, J. M. , and Park, W. , Org. Electron. 11, 13131317 (2010).
http://dx.doi.org/10.1016/j.orgel.2010.04.009
21.
21. Han, Y. , Wu, G. , Wang, M. , and Chen, H. , Polymer 51, 37363743 (2010).
http://dx.doi.org/10.1016/j.polymer.2010.05.057
22.
22. Wang, W. J. , Shan, C. X. , Zhu, H. , Ma, F. Y. , Shen, D. Z. , Fan, X. W. , and Choy, K. L. , J. Phys. D: Appl. Phys. 43, 0451029 (2010).
23.
23. McKeag, R. D. and Jackman, R. B. , Diam. Relat Mat. 7, 513518 (1998).
http://dx.doi.org/10.1016/S0925-9635(97)00274-4
24.
24. Soci, C. , Zhang, A. , Xiang, B. , Dayeh, S. A. , Daplin, P. R. , Park, J. , Bao, X. Y. , Lo, Y. H. , and Wang, D. , Nano Lett. 7, 10031009 (2007).
http://dx.doi.org/10.1021/nl070111x
25.
25. Cheng, J. Y. , Lu, H. T. , and Hwu, J. G. , Appl. Phys. Let. 96, 241112 (2010).
http://dx.doi.org/10.1063/1.3455339
26.
26. Li, J , Zhao, M , and Wanga, X. F. , Physica B 405, 996998 (2010).
http://dx.doi.org/10.1016/j.physb.2009.10.040
27.
27. De-Gang, Z. , Shuang, Z. , Wen-Bao, L. , Xiao-Peng, H. , De-Sheng, J. , Jian-Jun, Z. , Zong-Shun, L. , Hui, W. , Shu-Ming, Z. , Hui, Y. , and Long, W. , Chin. Phys. B 19, 057802 (2010).
http://dx.doi.org/10.1088/1674-1056/19/5/057802
28.
28. M. Willander, O. Nur, J. R. Sadaf, M. I. Qadir, S. Zaman, A. Zainelabdin, N. Bano and I. Hussain, Materials. 3, 26432667 (2010).
http://dx.doi.org/10.3390/ma3042643
29.
29. J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, Appl. Phys. Lett. 88, 182112 (2006).
http://dx.doi.org/10.1063/1.2201895
30.
30. S. Chu, M. Olmedo, Z. Yang, J. Kong, and J. Liu, Appl. Phys. Lett. 93, 181106 (2008).
http://dx.doi.org/10.1063/1.3012579
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/3/10.1063/1.4795737
Loading
/content/aip/journal/adva/3/3/10.1063/1.4795737
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/3/3/10.1063/1.4795737
2013-03-12
2014-10-25

Abstract

In this study, we have investigated the heterojunctions formed by n-ZnO thin films deposited on (100) p-Si:B using electrochemical deposition (ECD) technique. Structural, electrical and luminescence features of the thin films were respectively measured. Optimal sets of growth conditions seem to be the ones that are undergone for the samples D1 and D2. It was observed that n-ZnO thin films have dominantly preferred orientation of (002). It has been shown that the heterostructures exhibited reasonable rectifying behavior with turn-on voltage of about 1.2 V and ideality factor of 2.1. In case of illumination with 400 nm wavelength light, significant increase occurred especially in reverse bias current by a factor of 103 and 102 for the D1 and the D2, respectively. Bandgap of ZnO thin films has been determined to be 3.4 eV at the room temperature by using the band edge photoluminescence measurements. Finally, the room temperature electroluminescence (EL) results show that the heterostructures exhibits observable broad luminescence centered at the wavelengths of 390 and 510 nm for D1 and 470 nm for D2, respectively. Additionally, sharp lasing peaks are also observed in the EL spectra, probably due to the multiple scattering effects.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/3/3/1.4795737.html;jsessionid=5ui4ldlhu746k.x-aip-live-06?itemId=/content/aip/journal/adva/3/3/10.1063/1.4795737&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/3/10.1063/1.4795737
10.1063/1.4795737
SEARCH_EXPAND_ITEM