No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Growth and electrical properties of AlOx
grown by mist chemical vapor deposition
5. A. Chin, Y. H. Wu, S. B. Chen, C. C. Liao, and W. J. Chen, Symp. on VLSI Tech. Dig. Tech. Papar, 2000, p. 16.
7. Y.-H. Li, A Compendium of Geochemistry. From Solar Nebula to the Human Brain (Princeton University Press, Princeton, N.J, 2000) Chap. 1.
12. H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Oan, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 376 (2002).
13. K. Akimoto, N. Terasawa, V. Wolfgang, and T. Takahashi, PF News 28, 20 (2010) [in Japanese].
14. R. J. Ackermann, S. P. Grag, and E. G. Scott, J. Solid. State. Chem. Soc. 61, 275 (1978).
24. T. Suntola, in Handbook of Crystal Growth 3, Thin Films and Epitaxy Part B, Growth Mechanism and Dynamics, ed. D. T. J. Hurle (Elsevier Science B.V., Amsterdam, 1994) Chapter 14, p. 601.
27. S. J. Yun, J. S. Kang, M. C. Paek, and K.-S. Nam, J. Kor. Phys. Soc. 33, S170 (1998).
30. R. Rogojan, E. Andronescu, C. Ghitulica, and B. S. Vasile, U.P.B. Sci. Bull., Series B 73, 67 (2011).
39. T. Kawaharamura, H. Orita, T. Shirahata, T. Igawa, T. Ito, A. Yoshida, S. Fujita, and T. Hirao, ITE Technical Report 35, IDY2011-3 45 (2011) [in Japanese].
41. T. Ikenoue and S. Fujita, Proc. Material Research Society 2011 fall meeting MRS Proceedings 1400, Suppl. S2-05, p.mrsf11-1400-s02-05 (2012)
42. T. Kawaharamura, T. Hirao, S. Fujita, A. Yoshida, H. Orita, T. Shirahata, R. Hatano, and K. Mori, Convertech 39, 111 (2011) [in Japanese].
47. J. Kim, J. Song, O Kwon, S. Kim, C. S. Hwang, S.-H. Park, S. J. Yun, J. Jeong, and K. S. Hyun, Appl. Phys. Lett. 80, 2734 (2002).
48. M. Shirodker, V. Borker, C. Nather, W. Bensch, and K. S. Rane, Indian J. Chem. 49, 1607 (2010).
53. Kagakubinran Kisohen II (The Chemical Handbook Standard Edition) (Maruzen, Tokyo, 2004) p. II–291 [in Japanese]
54. Z. Wenming, and C. Nianyi, Trans. Nonferrous Met. Soc. China 7, No.2 34 (1997).
Article metrics loading...
Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (E BD ) over 6 MV/cm and a dielectric constant (κ) over 6. It is suggested that residual OH bonding in the AlOx thin films grown at temperatures below 375°C caused degradation of the breakdown field (E BD ). With FC type mist CVD, the reaction proceeded efficiently (E a = 22–24 kJ/mol) because the solvent, especially H2O, worked as a stronger oxygen source. The AlOx film could be grown at 450°C with a high deposition rate (23 nm/min) and smooth surface (RMS = 1.5 nm). Moreover, the AlOx thin films grown by mist CVD had excellent practicality as insulators because the gate leakage current (I G ) of the oxide thin film transistor (TFT) with an IGZO/AlOx stack was suppressed below 1 pA at a gate voltage (V G ) of 20 V.
Full text loading...
Most read this month