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The Positron Annihilation Spectra (PAS), Raman, and Photoluminescence spectroscopy reveal that Si Ge /Si interface quality can be significantly improved by the low energy plasma cleaning process using hydrogen. In the PAS, the particularly small value of lifetime and intensity near the Si Ge /Si interface in the sample with the treatment indicate that the defect concentration is successfully reduced 2.25 times, respectively. Fewer defects existed in the Si Ge /Si interface result in the high compressive strain about 0.36% in the top epi-Si Ge layer, which can be observed in Raman spectra and stronger radiative recombination rate about 1.39 times for the infrared emission, which can be observed in the photoluminescence spectra. With better Si Ge /Si interface quality, the SiGe-based devices can have better optical and electrical characteristics for more applications in the industry. The PAS is also demonstrated that it is the useful methodology tool to quantify the defect information in the SiGe-based material.


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