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Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires
8. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, and S. Han, Nat. nanotech. 5, 148 (2010).
20. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley and Sons, Inc., Hoboken, N. J., 1971).
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In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by the bias voltage applied at short distance will result in the effective width of the reverse biased Schottky barrier decreasing, and then result in the memristive effect or resistive switching phenomenon. By unidirectional bias voltage sweeping, the Au/WO3 Schottky contact can be turned gradually and reversibly into Ohmic contact, and then the two-terminal Au/WO3 nanowire/Au resistive switching device can be reconfigured gradually and reversibly from non-rectifying state to either a forward or reverse rectifying state.
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