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High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots
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See supplementary material at http://dx.doi.org/10.1063/1.4811275
for fluorescence and photoluminescence spectra, size of the QDs and the thickness of the QD layer, a set of CL spectra at different acceleration voltages, details of analytical and FDTD calculations, estimated CL fractions, and for more comparison. [Supplementary Material]
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We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots), is determined by the absorption depth of photons. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications.
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