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Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
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/content/aip/journal/adva/3/6/10.1063/1.4812871
2013-06-27
2014-08-30

Abstract

The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

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Scitation: Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/6/10.1063/1.4812871
10.1063/1.4812871
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