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1. N. Peranio, O. Eibl, and J. Nurnus, J. J. Appl. Phys. 100, 114306 (2006).
2. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
3. Y. Y. Li, G. A. Wang, X. G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia, S. C. Zhang, and Q. K. Xue, Adv. Mater. 22, 4002 (2010).
4. Y. L. Chen, J. G. Analytis, J. H. Chu, Z. K. Liu, S. K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain, and Z. X. Shen, Science 325, 178 (2009).
5. X. Chen, X. C. Ma, K. He, J. F. Jia, and Q. K. Xue, Adv. Mater. 23, 1162 (2011).
6. D. S. Kong, W. H. Dang, J. J. Cha, H. Li, S. Meister, H. L. Peng, Z. F. Liu, and Y. Cui, Nano. Lett. 10, 2245 (2010).
7. D. X. Qu, Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong, Science 329, 821 (2010).
8. J. Wang, A. M. DaSilva, C. Z. Chang, K. He, J. K. Jain, N. Samarth, X. C. Ma, Q. K. Xue, and M. H. W. Chan, Phys. Rev. B 83, 245438 (2011).
9. H. Steinberg, J. B. Laloe, V. Fatemi, J. S. Moodera, and P. Jarillo-Herrero, Phys. Rev. B 84, 233101 (2011).
10. J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu, Phys. Rev. Lett. 105, 176602 (2010).
11. X. L. Qi and S. C. Zhang, Phys. Today 63, 33 (2010).
12. M. Z. Hasan and J. E. Moore, Ann. Rev. Cond. Mat. Phys. 2, 55 (2011).
13. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
14. D. Hsieh, Y. Xia, D. Qian, L. Wray, J. H. Dil, F. Meier, J. Osterwalder, L. Patthey, J. G. Checkelsky, N. P. Ong, A. V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nature 460, 1101 (2009).
15. X. A. Zhang, J. Wang, and S. C. Zhang, Phys. Rev. B 82, 245107 (2010).
16. G. H. Zhang, H. J. Qin, J. Teng, J. D. Guo, Q. L. Guo, X. Dai, Z. Fang, and K. H. Wu, Appl. Phys. Lett. 95, 053114 (2009).
17. J. S. Zhang, C. Z. Chang, Z. C. Zhang, J. Wen, X. Feng, K. Li, M. H. Liu, K. He, L. L. Wang, X. Chen, Q. K. Xue, X. C. Ma, and Y. Y. Wang, Nat. Commun. 2, 574 (2011).
18. C. L. Song, Y. L. Wang, Y. P. Jiang, Y. Zhang, C. Z. Chang, L. L. Wang, K. He, X. Chen, J. F. Jia, Y. Y. Wang, Z. Fang, X. Dai, X. C. Xie, X. L. Qi, S. C. Zhang, Q. K. Xue, and X. C. Ma, Appl. Phys. Lett. 97, 143118 (2010).
19. X. Liu, D. J. Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, and J. K. Furdyna, Appl. Phys. Lett. 99, 171903 (2011).
20. H. D. Li, Z. Y. Wang, X. Kan, X. Guo, H. T. He, Z. Wang, J. N. Wang, T. L. Wong, N. Wang, and M. H. Xie, New. J. Phys. 12, 103038 (2010).
21. H. T. He, G. Wang, T. Zhang, I. K. Sou, G. K. L. Wong, J. N. Wang, H. Z. Lu, S. Q. Shen, and F. C. Zhang, Phys. Rev. Lett. 106, 166805 (2011).
22. A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, and N. Samarth, Appl. Phys. Lett. 97, 262104 (2010).
23. J. Wang, X. Chen, B. F. Zhu, and S. C. Zhang, Phys. Rev. B 85, 235131 (2012).
24.See supplementary material at for the Hall bar, RHEED evolution, more AFM investigations, and transport properties of Q2Te3 films grown on GaAs (111)A substrates. [Supplementary Material]
25. M. Shinohara and N. Inoue, Appl. Phys. Lett. 66, 1936 (1995).
26. Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012).
27. Y. Takagaki and B. Jenichen, Semicond. Sci. Tech. 27, 035015 (2012).
28. Y. Takagaki, A. Giussani, K. Perumal, R. Calarco, and K.-J. Friedland, Phys. Rev. B 86, 125137 (2012).
29. J. Wang, H. D. Li, C. Z. Chang, K. He, J. S. Lee, H. Z. Lu, Y. Sun, X. C. Ma, N. Samarth, S. Q. Shen, Q. K. Xue, M. H. Xie, and M. H. W. Chan, Nano. Res 5, 739 (2012).
30. H. Tang, D. Liang, R. L. J. Qiu, and X. P. A. Gao, Acs Nano 5, 7510 (2011).
31. H. Z. Lu, J. R. Shi, and S. Q. Shen, Phys. Rev. Lett. 107, 076801 (2011).
32. Y. S. Kim, M. Brahlek, N. Bansal, E. Edrey, G. A. Kapilevich, K. Iida, M. Tanimura, Y. Horibe, S. W. Cheong, and S. Oh, Phys. Rev. B 84, 073109 (2011).
33. J. Wang, C. Z. Chang, H. D. Li, K. He, D. M. Zhang, M. Singh, X. C. Ma, N. Samarth, M. H. Xie, Q. K. Xue, and M. H. W. Chan, Phys. Rev. B 85, 045415 (2012).
34. D. M. Zhang, J. Wang, A. M. DaSilva, J. S. Lee, H. R. Gutierrez, M. H. W. Chan, J. Jain, and N. Samarth, Phys. Rev. B 84, 165120 (2011).
35. S. Hikami, A. I. Larkin, and Y. Nagaoka, Prog. Theor. Phys. 63, 707 (1980).
36. H. Nagai, J. Appl. Phys. 45, 3789 (1974).
37. F. Riesz, J. Vac. Sci. Technol. A 14, 425 (1996).

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High quality BiTe and SbTe topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality BiTe and SbTe films. Hall and magnetoresistance measurements indicate that p type SbTe and n type BiTe topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.


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