Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/3/7/10.1063/1.4815972
1.
1. N. Peranio, O. Eibl, and J. Nurnus, J. J. Appl. Phys. 100, 114306 (2006).
http://dx.doi.org/10.1063/1.2375016
2.
2. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
http://dx.doi.org/10.1038/nphys1270
3.
3. Y. Y. Li, G. A. Wang, X. G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia, S. C. Zhang, and Q. K. Xue, Adv. Mater. 22, 4002 (2010).
http://dx.doi.org/10.1002/adma.201000368
4.
4. Y. L. Chen, J. G. Analytis, J. H. Chu, Z. K. Liu, S. K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain, and Z. X. Shen, Science 325, 178 (2009).
http://dx.doi.org/10.1126/science.1173034
5.
5. X. Chen, X. C. Ma, K. He, J. F. Jia, and Q. K. Xue, Adv. Mater. 23, 1162 (2011).
http://dx.doi.org/10.1002/adma.201003855
6.
6. D. S. Kong, W. H. Dang, J. J. Cha, H. Li, S. Meister, H. L. Peng, Z. F. Liu, and Y. Cui, Nano. Lett. 10, 2245 (2010).
http://dx.doi.org/10.1021/nl101260j
7.
7. D. X. Qu, Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong, Science 329, 821 (2010).
http://dx.doi.org/10.1126/science.1189792
8.
8. J. Wang, A. M. DaSilva, C. Z. Chang, K. He, J. K. Jain, N. Samarth, X. C. Ma, Q. K. Xue, and M. H. W. Chan, Phys. Rev. B 83, 245438 (2011).
http://dx.doi.org/10.1103/PhysRevB.83.245438
9.
9. H. Steinberg, J. B. Laloe, V. Fatemi, J. S. Moodera, and P. Jarillo-Herrero, Phys. Rev. B 84, 233101 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.233101
10.
10. J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu, Phys. Rev. Lett. 105, 176602 (2010).
http://dx.doi.org/10.1103/PhysRevLett.105.176602
11.
11. X. L. Qi and S. C. Zhang, Phys. Today 63, 33 (2010).
http://dx.doi.org/10.1063/1.3293411
12.
12. M. Z. Hasan and J. E. Moore, Ann. Rev. Cond. Mat. Phys. 2, 55 (2011).
http://dx.doi.org/10.1146/annurev-conmatphys-062910-140432
13.
13. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
http://dx.doi.org/10.1103/RevModPhys.82.3045
14.
14. D. Hsieh, Y. Xia, D. Qian, L. Wray, J. H. Dil, F. Meier, J. Osterwalder, L. Patthey, J. G. Checkelsky, N. P. Ong, A. V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nature 460, 1101 (2009).
http://dx.doi.org/10.1038/nature08234
15.
15. X. A. Zhang, J. Wang, and S. C. Zhang, Phys. Rev. B 82, 245107 (2010).
http://dx.doi.org/10.1103/PhysRevB.82.245107
16.
16. G. H. Zhang, H. J. Qin, J. Teng, J. D. Guo, Q. L. Guo, X. Dai, Z. Fang, and K. H. Wu, Appl. Phys. Lett. 95, 053114 (2009).
http://dx.doi.org/10.1063/1.3200237
17.
17. J. S. Zhang, C. Z. Chang, Z. C. Zhang, J. Wen, X. Feng, K. Li, M. H. Liu, K. He, L. L. Wang, X. Chen, Q. K. Xue, X. C. Ma, and Y. Y. Wang, Nat. Commun. 2, 574 (2011).
http://dx.doi.org/10.1038/ncomms1588
18.
18. C. L. Song, Y. L. Wang, Y. P. Jiang, Y. Zhang, C. Z. Chang, L. L. Wang, K. He, X. Chen, J. F. Jia, Y. Y. Wang, Z. Fang, X. Dai, X. C. Xie, X. L. Qi, S. C. Zhang, Q. K. Xue, and X. C. Ma, Appl. Phys. Lett. 97, 143118 (2010).
http://dx.doi.org/10.1063/1.3494595
19.
19. X. Liu, D. J. Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, and J. K. Furdyna, Appl. Phys. Lett. 99, 171903 (2011).
http://dx.doi.org/10.1063/1.3655995
20.
20. H. D. Li, Z. Y. Wang, X. Kan, X. Guo, H. T. He, Z. Wang, J. N. Wang, T. L. Wong, N. Wang, and M. H. Xie, New. J. Phys. 12, 103038 (2010).
http://dx.doi.org/10.1088/1367-2630/12/10/103038
21.
21. H. T. He, G. Wang, T. Zhang, I. K. Sou, G. K. L. Wong, J. N. Wang, H. Z. Lu, S. Q. Shen, and F. C. Zhang, Phys. Rev. Lett. 106, 166805 (2011).
http://dx.doi.org/10.1103/PhysRevLett.106.166805
22.
22. A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, and N. Samarth, Appl. Phys. Lett. 97, 262104 (2010).
http://dx.doi.org/10.1063/1.3532845
23.
23. J. Wang, X. Chen, B. F. Zhu, and S. C. Zhang, Phys. Rev. B 85, 235131 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.235131
24.
24.See supplementary material at http://dx.doi.org/10.1063/1.4815972 for the Hall bar, RHEED evolution, more AFM investigations, and transport properties of Q2Te3 films grown on GaAs (111)A substrates. [Supplementary Material]
25.
25. M. Shinohara and N. Inoue, Appl. Phys. Lett. 66, 1936 (1995).
http://dx.doi.org/10.1063/1.113282
26.
26. Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012).
http://dx.doi.org/10.1103/PhysRevLett.108.115501
27.
27. Y. Takagaki and B. Jenichen, Semicond. Sci. Tech. 27, 035015 (2012).
http://dx.doi.org/10.1088/0268-1242/27/3/035015
28.
28. Y. Takagaki, A. Giussani, K. Perumal, R. Calarco, and K.-J. Friedland, Phys. Rev. B 86, 125137 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.125137
29.
29. J. Wang, H. D. Li, C. Z. Chang, K. He, J. S. Lee, H. Z. Lu, Y. Sun, X. C. Ma, N. Samarth, S. Q. Shen, Q. K. Xue, M. H. Xie, and M. H. W. Chan, Nano. Res 5, 739 (2012).
http://dx.doi.org/10.1007/s12274-012-0260-z
30.
30. H. Tang, D. Liang, R. L. J. Qiu, and X. P. A. Gao, Acs Nano 5, 7510 (2011).
http://dx.doi.org/10.1021/nn2024607
31.
31. H. Z. Lu, J. R. Shi, and S. Q. Shen, Phys. Rev. Lett. 107, 076801 (2011).
http://dx.doi.org/10.1103/PhysRevLett.107.076801
32.
32. Y. S. Kim, M. Brahlek, N. Bansal, E. Edrey, G. A. Kapilevich, K. Iida, M. Tanimura, Y. Horibe, S. W. Cheong, and S. Oh, Phys. Rev. B 84, 073109 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.073109
33.
33. J. Wang, C. Z. Chang, H. D. Li, K. He, D. M. Zhang, M. Singh, X. C. Ma, N. Samarth, M. H. Xie, Q. K. Xue, and M. H. W. Chan, Phys. Rev. B 85, 045415 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.045415
34.
34. D. M. Zhang, J. Wang, A. M. DaSilva, J. S. Lee, H. R. Gutierrez, M. H. W. Chan, J. Jain, and N. Samarth, Phys. Rev. B 84, 165120 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.165120
35.
35. S. Hikami, A. I. Larkin, and Y. Nagaoka, Prog. Theor. Phys. 63, 707 (1980).
http://dx.doi.org/10.1143/PTP.63.707
36.
36. H. Nagai, J. Appl. Phys. 45, 3789 (1974).
http://dx.doi.org/10.1063/1.1663861
37.
37. F. Riesz, J. Vac. Sci. Technol. A 14, 425 (1996).
http://dx.doi.org/10.1116/1.580100
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/7/10.1063/1.4815972
Loading
/content/aip/journal/adva/3/7/10.1063/1.4815972
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/3/7/10.1063/1.4815972
2013-07-01
2016-09-27

Abstract

High quality BiTe and SbTe topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality BiTe and SbTe films. Hall and magnetoresistance measurements indicate that p type SbTe and n type BiTe topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/3/7/1.4815972.html;jsessionid=9Xkjw69bw-OvFmmnvgaQF-wP.x-aip-live-06?itemId=/content/aip/journal/adva/3/7/10.1063/1.4815972&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/3/7/10.1063/1.4815972&pageURL=http://scitation.aip.org/content/aip/journal/adva/3/7/10.1063/1.4815972'
Right1,Right2,Right3,