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On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
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/content/aip/journal/adva/3/8/10.1063/1.4817834
2013-08-01
2014-08-29

Abstract

The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

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Scitation: On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
http://aip.metastore.ingenta.com/content/aip/journal/adva/3/8/10.1063/1.4817834
10.1063/1.4817834
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