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The resistive switching in TiO2
films studied by conductive atomic force microscopy and Kelvin probe force microscopy
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19.Using a CAFM under high-vacuum conditions, filaments size in 2-4 nm diameter has also been reported,4 which means that each conducting spot could even be further composed of multiple conducting filaments in smaller sizes.
23. J. Philibert, Atom Movements — Diffusion and Mass Transport in Solids (Editions de Physique, 1991).
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The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.
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