No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
A novel mode of current switching dependent on activated charge transport
2. J. E. Lilienfeld, “Electric current control mechanism,” Canadian patent CA 272437 (19/07/1927).
5. Y. Yamamoto, “Technological innovation of thin-Film transistors: technology development, history, and future,” Japanese Journal of Applied Physics 51, 060001 (2012).
7. M. Härting, J. Zhang, D. R. Gamota, and D. T. Britton, “Fully printed field effect transistors,” Applied Physics Letters 94, 193509 (2009).
8. E. Platania et al., “A physics based model for a SiC JFET accounting for electric-field-dependent mobility,” IEEE Transactions on Industry Applications 47, 199–211 (2011).
9. M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, “Metal semiconductor field effect transistor based on single crystal GaN,” Applied Physics Letters 62, 1786–1787 (1993).
11. D. T. Britton, E. A. Odo, G. Goro Gonfa, E. O. Jonah, and E. O. M. Härting, “Size distribution and surface characteristics of silicon nanoparticles,” Journal of Applied Crystallography 42, 448–456 (2009).
12. D. K. Rai, G. Beaucage, E. O. Jonah, D. T. Britton, S. Sukumaran, S. Chopra, G. Goro Gonfa, and G. M. Härting, “Quantitative investigations of aggregate systems,” Journal of Chemical Physics 137, 044311 (2012).
13. E. O. Jonah, D. T. Britton, P. Beaucage, D. K. Rai, G. Beaucage, B. Magunje, J. Ilavsky, M. R. Scriba, and M. Härting, “Topological investigation of electronic silicon nanoparticulate aggregates using ultra small angle X-ray scattering,” Journal of Nanoparticle Research 14, 1249 (2012).
14. U. Männl, A. Chuvilin, B. Magunje, E. O. Jonah, M. Härting, and D. T. Britton, “Interfacial and network characteristics of silicon nanoparticle layers used in printed electronics,” Japanese Journal of Applied Physics 52, 05DA11 (2013).
15. K. Bock “Polymer Electronics Systems – Polytronics,” Proceedings of the IEEE 93, 1400–1406 (2005).
18. S. K. Banerjee et al. “Graphene for CMOS and Beyond CMOS Applications,” Proceedings of the IEEE 98, 2038–2046 (2010).
19. P. Avouris et al. “Carbon nanotube electronics,” Proceedings of the IEEE 91, 1772–1784 (2003).
20. Y. Awano et al. “Carbon Nanotubes for VLSI: Interconnect and Transistor Applications” Proceedings of the IEEE 98, 2015–2031 (2010).
21. M. C. McAlpine et al. “High-Performance Nanowire Electronics and Photonics and Nanoscale Patterning on Flexible Plastic Substrates,” Proceedings of the IEEE 93, 1357–1363 (2005).
Article metrics loading...
We demonstrate a fully printed transistor with a planar triode geometry, using nanoparticulate silicon as the semiconductor material, which has a unique mode of operation as an electrically controlled two-way (double throw) switch. A signal applied to the base changes the direction of the current from between the collector and base to between the base and emitter. We further show that the switching characteristic results from the activated charge transport in the semiconductor material, and that it is independent of the dominant carrier type in the semiconductor and the nature of the junction between the semiconductor and the three contacts. The same equivalent circuit, and hence similar device characteristics, can be produced using any other material combination with non-linear current-voltage characteristics, such as a suitable combination of semiconducting and conducting materials, such that a Schottky junction is present at all three contacts.
Full text loading...
Most read this month