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1. T.-Y. Liow, K.-W. Ang, F. Qing, J. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, IEEE J. Sel. Top. Quantum Electron. 16(1), 307 (2010).
2. A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, and G.-Q. Lo, Opt. Express 19(6), 5040 (2011).
3. S. Liao, N. N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C , Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, Opt. Express 19(11), 10967 (2011).
4. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. cassan, C. , Kopp, H. Zimmermann, and J. M. Fedeli, Opt. Express 20(2), 1096 (2012).
5. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Applied Physics Letters 83, 3275 (2003).
6. C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, Appl. Phys. Lett. 87, 091909 (2005).
7. Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, J. Appl. Phys. 112, 034509 (2012).
8. R. Camacho-Aguilera, Y. Cai, J. T. Bessette, L. C. Kimerling, and J. Michel, Opt. Express 2(11), 1462 (2012).
9. A. Mekis, S. Abdalla, B. Analui, S. Gloeckner, A. Guckenberger, R. Koumans, D. Kucharski, Y. Liang, G. Masini, S. Mirsaidi, A. Narasimha, T. Pinguet, V. Sadagopan, B. Welch, J. White, and J. Witzens, SPIE 6897, 68970L (2008).
10. J. M. Hartmann, J. –F Damlencourt, Y. Bogumilowicz, P. Holliger, G. Rolland, T. Billon, J. Crystal Growth 274, 90, (2005)
11. K. W. Ang, J. W. Ng, G.-Q. Lo, and D. L. Kwong, Appl. Phys. Lett. 94, 223515 (2009).

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A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less).


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