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/content/aip/journal/adva/3/9/10.1063/1.4821278
1.
1. S. Ohkawa, M. Aoki, and H. Masuda, Semiconductor Manufacturing, IEEE Transactions on 17(2), 155 (2004).
http://dx.doi.org/10.1109/TSM.2004.827001
2.
2. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Electron Device Lett. 25, 191 (2004).
http://dx.doi.org/10.1109/LED.2004.825195
3.
3. F. Hüe, M. Hÿtch, H. Bender, F. Houdellier, and A. Claverie, Phys. Rev. Lett. 100, 156602 (2008).
http://dx.doi.org/10.1103/PhysRevLett.100.156602
4.
4. M. Gu, C. Song, F. Yang, E. Arenholz, N. D. Browning, and Y. Takamura, J. Appl. Phys. 111, 084906 (2012).
http://dx.doi.org/10.1063/1.4705397
5.
5. J. Chung and L. Rabenberg, Appl. Phys. Lett. 91, 231902 (2007).
http://dx.doi.org/10.1063/1.2821843
6.
6. D. Diercks, G. Lian, J. Chung, and M. Kaufman, Journal of Microscopy 241, 195 (2011).
http://dx.doi.org/10.1111/j.1365-2818.2010.03423.x
7.
7. J. Chung, G. Lian, and L. Rabenberg, Appl. Phys. Lett. 93, 081909 (2008).
http://dx.doi.org/10.1063/1.2970050
8.
8. M. Hÿtch, F. Houdellier, F. Hüe, and E. Snoeck, Nature (London) 453, 1086 (2008).
http://dx.doi.org/10.1038/nature07049
9.
9. D. Cooper, J.-P. Barnes, J.-M. Hartmann, A. Béché, and J.-L. Rouvière, Appl. Phys. Lett. 95, 053501 (2009).
http://dx.doi.org/10.1063/1.3196549
10.
10. S. Kim, S. Lee, Y. Oshima, Y. Kondo, E. Okunishi, N. Endo, J. Jung, G. Byun, S. Lee, and K. Lee, Appl. Phys. Lett. 102, 161604 (2013).
http://dx.doi.org/10.1063/1.4803087
11.
11. D. Cooper, C. Le Royer, Armand Béché, and Jean-Luc Rouvière, Appl. Phys. Lett. 100, 233121 (2012).
http://dx.doi.org/10.1063/1.4723572
12.
12. S. Hosseini Vajargah, M. Couillard, K. Cui, S. Ghanad Tavakoli, B. Robinson, R. N. Kleiman, J. S. Preston, and G. A. Botton, Appl. Phys. Lett. 98, 082113 (2011).
http://dx.doi.org/10.1063/1.3551626
13.
13. J. Chung, G. Lian, and L. Rabenberg, IEEE Electron Device Lett. 31(8), 854 (2010).
http://dx.doi.org/10.1109/LED.2010.2049562
14.
14. A. Béché, J.-L. Rouvière, J. P. Barnes, and D. Cooper, Ultramicroscopy 131, 10 (2013).
http://dx.doi.org/10.1016/j.ultramic.2013.03.014
15.
15. K. Müller, H. Ryll, I. Ordavo, S. Ihle, L. Strüder, K. Volz, J. Zweck, H. Soltau, and A. Rosenauer, Appl. Phys. Lett. 101, 212110 (2012).
http://dx.doi.org/10.1063/1.4767655
16.
16. S. Kim, Y. Kondo, K. Lee, G. Byun, J. Kim, S. Lee, and K. Lee, Appl. Phys. Lett. 103, 033523 (2013).
http://dx.doi.org/10.1063/1.4816286
17.
17. V. Grillo and F. Rossi, Ultramicroscopy 125, 112 (2013).
http://dx.doi.org/10.1016/j.ultramic.2012.10.009
18.
18. D. Cooper, T. Denneulin, J.-P. Barnes, J.-M. Hartmann, L. Hutin, C. Le Royer, A. Béché, and J.-L. Rouvière, J. Appl. Phys. 112, 124505 (2012).
http://dx.doi.org/10.1063/1.4767925
19.
19. S. Kim, S. Lee, Y. Kondo, K. Lee, G. Byun, S. Lee, and K. Lee, J. Appl. Phys. 114, 053518 (2013).
http://dx.doi.org/10.1063/1.4817729
20.
20. S. J. Pennycook, Scanning Transmission Electron Microscopy: Z-Contrast Imaging characterization of material, Published online (12 OCT 2012).
21.
21. D. O. Klenov, S. D. Findlay, L. J. Allen, and S. Stemmer, Phys. Rev. B 76, 014111 (2007).
http://dx.doi.org/10.1103/PhysRevB.76.014111
22.
22. D. Kosemura and A. Ogura, Jpn. J. Applied Phys. 50, 04DA06 (2011).
http://dx.doi.org/10.1143/JJAP.50.04DA06
23.
23. Y. C. Yeo and J. S. Sun, Appl. Phys. Lett. 86, 023103 (2005).
http://dx.doi.org/10.1063/1.1846152
24.
24. M. J. Hÿtch, E. Snoeck, and R. Kilaas, Ultramicroscopy 74, 131 (1998).
http://dx.doi.org/10.1016/S0304-3991(98)00035-7
25.
25. S. Kim, Y. Oshima, H. Sawada, T. Kaneyama, Y. Kondo, M. Takeguchi, Y. Nakayama, Y. Tanishiro, and K. Takayanagi, Journal of electron microscopy 60(2), 109 (2011).
http://dx.doi.org/10.1093/jmicro/dfq084
26.
26. S. Kim, Y. Oshima, Y. Tanishiro, and K. Takayanagi, Ultramicroscopy 121, 38 (2012).
http://dx.doi.org/10.1016/j.ultramic.2012.06.016
27.
27. J. M. LeBeau, S. D. Findlay, L. J. Allen, and S. Stemmer, Phys. Rev. Lett. 100, 206101 (2008).
http://dx.doi.org/10.1103/PhysRevLett.100.206101
28.
28. R. F. Egerton and S. C. Cheng, Ultramicroscopy 21, 231 (1987).
http://dx.doi.org/10.1016/0304-3991(87)90148-3
29.
29. A. Béché, J.-L. Rouvière, J. P. Barnes, and D. Cooper, Ultramicroscopy 111, 227 (2011).
http://dx.doi.org/10.1016/j.ultramic.2010.11.030
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/content/aip/journal/adva/3/9/10.1063/1.4821278
2013-09-10
2016-09-29

Abstract

Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to quantitative measurement of the strain field in transistor arrays. The quantitative strain profile over 20 transistors was obtained with high reliability and a precision of 0.1%. The strain field was found to form homogeneously in the channels of the transistor arrays. Furthermore, strain relaxation due to the thin foil effect was quantitatively investigated for thicknesses of 35 to 275 nm.

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