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1. M. Missous, I. Kostakis, and D. Saeedkia, “Long Wavelength Low Temperature Grown GaAs and InP-Based Terahertz Photoconductors Devices,” IEEE Sensors Journal 13(1), 63 (2013).
2. P. Kordos, F. Ruders, M. Marso, and A. Forster, Properties of LT GaAs for photomixing up to THz frequencies (Institute of Thin Film and Ion Technology, Research Centre Julich – Germany, 1996), p. 71.
3. C. Baker, I. Grecory, W. Tribe, I. Bradley, M. Evans, E. Linfield, and M. Missous, “Highly resistive annealed low-temperature-grown InGaAs with sub-fs 500 carrier lifetimes,” Appl. Phys. Lett. 85(21), 4965 (2004).
4. I. Kostakis, D. Saeedkia, and M. Missous, “Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 μm Pulse Excitation,” IEEE Transactions on Terahertz Science and Technology 2(6), 617 (2012).
5. A. Takazato, M. Kamakura, T. Matsui, J. Kitagawa, and Y. Kadoya, “Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 μm pulse excitation,” Appl. Phys. Lett. 91, 011102 (2007).
6. M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, and R. Krause-Rehberg, “Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs,” J. Appl. Phys. 83(1), 561 (1998).
7. L. Duvillaret, F. Garet, J. Roux, and J. Coutaz, “Analytical modeling and optimization of terahertz time-domain spectroscopy experiments using photoswitches as antennas,” IEEE J. Sel. Top. Quantum Electron. 7(4), 615 (2001).
8. P. Upadhya, W. Fan, A. Burnett, J. Cunningham, A. Davies, E. Linfield, J. Hughes, E. Camus, M. Johnston, and H. Beere, “Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically exited photoconductive antenna,” Opt. Lett. 32(16), 2297 (2007).
9. I. Gregory, C. Baker, W. R. Tribe, M. Evans, H. Beere, E. Linfield, A. Davies, and M. Missous, “High resistivity annealed low – temperature GaAs with 100 fs lifetimes,” Appl. Phys. Lett. 83, 4199 (2003).
10. I. Kostakis, D. Saeedkia, and M. Missous, “Characterisation of LT-InGaAs-InAlAs semiconductor photo-mixers at 1.55 μm wavelength illumination for THz generation and detection,” J. Appl. Phys. 111, 103105 (2012).
11. A. Kastalsky, R. Dingle, K. Y. Cheng, and A. Y. Cho, “Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interface,” Appl. Phys. Lett. 41(3), 274 (1982).
12. G. Bastard, “Energy levels and alloy scattering in InP-In(Ga)As heterojunctions,” Appl. Phys. Lett. 43(6), 591 (1983).
13. P. K. Basu and B. R. Nag, “Estimation of alloy scattering potential in ternaries from the study of two-dimensional electron transport,” Appl. Phys. Lett. 43(7), 689 (1983).
14. W. P. hong, G. I. Ng, P. K. Bhattacharya, D. Pavlidis and S. Willing, “Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53 ≤ x ≤ 0.65) modulation-doped heterostructures,” J. Appl. Phys. 64(4). 1945 (1988).
15. A. Gold, “Linear temperature dependence of mobility in quantum wells and the effects of exchange and correlation,” J. Phys.: Condens. Matter 13, 11641 (2001)

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Recently, detailed characterisation of materials and evaluation of devices based on low temperature (LT) grown InGaAs-InAlAs and GaAs-based terahertz (THZ) photoconductors using the Molecular Beam Epitaxy (MBE) technique have been reported by our group. In this work, the characterisation is extended in order to study the growth reproducibility of the photoconductors and the temperature dependence of their transport properties. We show that the structural, optical and transport characteristics of a photoconductor can be optimised by growing the same structure under the same growing conditions but in different MBE systems. The Hall Effect measurements over the temperature range of 100 K–400 K revealed temperature independency of the mobility within a wide range, in which the concentration is changing with the temperature. The majority of carriers are found to be electrons even in the case of Be doped samples, which is attributed to the large density of excess As anti-site atoms. The transport properties of low temperature grown materials are presented for the first time and the behaviour is found to be different to those of conventional materials, which are grown under normal growth conditions.


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